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282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 24, 页码: 1113
Authors:  Peng Dong, Jianchang Yan, Junxi Wang, Yun Zhang, Chong Geng, Tongbo Wei, Peipei Cong, Yiyun Zhang, Jianping Zeng, Yingdong Tian, Lili Sun, Qingfeng Yan, Jinmin Li, Shunfei Fan, Zhixin Qin
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Au-GaN肖特基结的伏安特性 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 4, 页码: 369
Authors:  林兆军;  张太平;  武国英;  王玮;  阎桂珍;  孙殿照;  张建平;  张国义
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NH3源MBE GaN研究 学位论文
, 北京: 中国科学院半导体研究所, 1999
Authors:  张剑平
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Al_xGa_(1-x)N and GaN/Al_xGa_(1-x)N Quantum Wells Grown by Gas Sourc 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 5, 页码: 407
Authors:  王晓亮;  孙殿照;  张剑平;  孔梅影;  曾一平;  李晋闽;  林兰英
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GaN压电效应对载流子浓度的影响 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 7, 页码: 498
Authors:  张剑平;  王晓亮;  孙殿照;  李晓兵;  傅荣辉;  孔梅影
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GSMBE GaN 膜的电子输运性质研究 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 12, 页码: 890
Authors:  王晓亮;  孙殿照;  孔梅影;  张剑平;  曾一平;  李晋闽;  林兰英
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高质量GaN材料的GSMBE生长 期刊论文
半导体学报, 1997, 卷号: 18, 期号: 12, 页码: 935
Authors:  王晓亮;  孙殿照;  孔梅影;  张剑平;  傅荣辉;  朱世荣;  曾一平;  李晋闽;  林兰英
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1.5μm外腔半导体激光器弱相干光光纤通信实验系统 期刊论文
电子学报, 1990, 卷号: 18, 期号: 4, 页码: 100
Authors:  吴彝尊;  惠荣庆;  张建平;  管克俭;  彭怀德
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