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基于ART技术的硅基III-V族材料及器件研究 学位论文
, 北京: 中国科学院研究生院, 2016
Authors:  李士颜
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高深宽比限制技术  选区外延技术  Si基iii-v族异质外延  Si基高迁移率iii-v族mosfet  纳米激光器  
A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides 期刊论文
Photonics Technology Letters, IEEE, 2016, 卷号: 28, 期号: 9, 页码: 967-970
Authors:  Mengke Li;  Lianxue Zhang;  Hongyan Yu;  Lijun Yuan;  Qiang Kan;  Weixi Chen;  Ying Ding;  Shiyan Li;  Junping Mi;  Guangzhao Ran;  Jiaoqing Pan
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The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs 期刊论文
IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 8, 页码: 3084-3087
Authors:  Xiangting Kong;  Renrong Liang;  Xuliang Zhou;  Shiyan Li;  Mengqi Wang;  Honggang Liu;  Jing Wang;  Wei Wang;  Jiaoqing Pan
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Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio 期刊论文
Chinese Physics Letters, 2015, 卷号: 32, 期号: 2, 页码: 028101
Authors:  Li ShiYan;  Zhou XuLiang;  Kong XiangTing;  Li MengKe;  Mi JunPing;  Bian Jing;  Wang Wei;  Pan JiaoQing
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Evaluation of growth mode and optimization of growth parameters for GaAs epitaxy in V-shaped 期刊论文
Journal of Crystal Growth, 2015, 卷号: 426, 页码: 147-152
Authors:  Shiyan Li;  Xuliang Zhou;  Xiangting Kong;  Mengke Li;  Junping Mi;  Jing Bian;  Wei Wang;  Jiaoqing Pan
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A Directional-Emission 1060nm GaAs-InGaAs microcylinder laser 期刊论文
IEEE Photonics Technology Letters, 2015, 卷号: 27, 期号: 6, 页码: 569-572
Authors:  Mengke Li;  Xuliang Zhou;  Ying Ding;  Weixi Chen;  Hongyan Yu;  Qiang Kan;  Shiyan Li;  Junping Mi;  Wei Wang;  Jiaoqing Pan
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High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio 𝐼on/𝐼off Grown on Semi-insulating GaAs Substrates by MOCVD 期刊论文
Chinese Physics Letters, 2015, 卷号: 32, 期号: 3, 页码: 37301-37303
Authors:  XiangTing Kong;  XuLiang Zhou;  ShiYan Li;  LiJun Qiao;  HongGang Liu;  Wei Wang;  JiaoQing Pan
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Distributed Bragg reflector laser (1.8 μm) with 10 nm wavelength tuning range 期刊论文
Chinese Optics Letters, 2015, 卷号: 13, 期号: 4, 页码: 041401
Authors:  Junping Mi;  Hongyan Yu;  Lijun Yuan;  Shiyan Li;  Mengke Li;  Song Liang;  Qiang Kan;  Jiaoqing Pan
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High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 卷号: 62, 期号: 5, 页码: 1456-1459
Authors:  Xiangting Kong;  Xuliang Zhou;  Shiyan Li;  Hudong Chang;  Honggang Liu;  Jing Wang;  Renrong Liang;  Wei Wang;  Jiaoqing Pan
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n-GaAs和p-GaN晶片的直接键合 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 11, 页码: 1815-1817
Authors:  李慧;  何国荣;  渠红伟;  石岩;  种明;  曹玉莲;  陈良惠
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