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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 卷号: 28, 期号: 4, 页码: 045004
Authors:  Guo, Xiaolu;  Ma, Wenquan;  Huang, Jianliang;  Zhang, Yanhua;  Wei, Yang;  Cui, Kai;  Cao, Yulian;  Li, Qiong
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540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Authors:  Cui, Kai;  Ma, Wenquan;  Zhang, Yanhua;  Huang, Jianliang;  Wei, Yang;  Cao, Yulian;  Guo, Xiaolu;  Li, Qiong
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Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 45, 页码: 173-176
Authors:  Cui K (Cui, Kai);  Ma WQ (Ma, Wenquan);  Huang JL (Huang, Jianliang);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cao YL (Cao, Yulian);  Gu YX (Gu, Yongxian);  Yang T (Yang, Tao)
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Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity 期刊论文
Zhang, Yanhua1 ; Ma, Wenquan1 ; Wei, Yang1 ; Cao, Yulian1 ; Huang, Jianliang1 ; Cui, Kai1 ; Guo, Xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511
Authors:  Zhang, Yanhua;  Ma, Wenquan;  Wei, Yang;  Cao, Yulian;  Huang, Jianliang;  Cui, Kai;  Guo, Xiaolu
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High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control 期刊论文
IEEE Journal of Quantum Electronics, 2012, 卷号: 48, 期号: 4, 页码: 512-515
Authors:  Wei, Yang;  Ma, Wenquan;  Zhang, Yanhua;  Huang, Jianliang;  Cao, Yulian;  Cui, Kai
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How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m 期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326
Authors:  Huang JL (Huang, Jianliang);  Ma WQ (Ma, Wenquan);  Wei Y (Wei, Yang);  Zhang YH (Zhang, Yanhua);  Cui K (Cui, Kai);  Cao YL (Cao, Yulian);  Guo XL (Guo, Xiaolu);  Shao J (Shao, Jun)
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High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073
Authors:  Cao YL (Cao, Yulian);  Ji HM (Ji, Haiming);  Xu PF (Xu, Pengfei);  Gu YX (Gu, Yongxian);  Ma WQ (Ma, Wenquan);  Yang T (Yang, Tao)
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Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.44201
Authors:  Xu PF;  Yang T;  Ji HM;  Cao YL;  Gu YX;  Wang ZG;  Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
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Well Lasers  Dependence  Diode  Gain  
一种制作高亮度半导体锥形激光器/放大器的方法 专利
专利类型: 发明, 申请日期: 2009-07-01, 公开日期: 3999
Inventors:  曹玉莲;  陈良惠 
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Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
Authors:  Ji HM;  Yang T;  Cao YL;  Ma WQ;  Cao Q;  Chen LH;  Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
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Density-of-states