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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 卷号: 28, 期号: 4, 页码: 045004
Authors:
Guo, Xiaolu
;
Ma, Wenquan
;
Huang, Jianliang
;
Zhang, Yanhua
;
Wei, Yang
;
Cui, Kai
;
Cao, Yulian
;
Li, Qiong
Adobe PDF(315Kb)
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View/Download:988/201
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Submit date:2013/10/08
540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 759-761
Authors:
Cui, Kai
;
Ma, Wenquan
;
Zhang, Yanhua
;
Huang, Jianliang
;
Wei, Yang
;
Cao, Yulian
;
Guo, Xiaolu
;
Li, Qiong
Adobe PDF(502Kb)
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View/Download:981/208
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Submit date:2013/08/27
Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 卷号: 45, 页码: 173-176
Authors:
Cui K (Cui, Kai)
;
Ma WQ (Ma, Wenquan)
;
Huang JL (Huang, Jianliang)
;
Wei Y (Wei, Yang)
;
Zhang YH (Zhang, Yanhua)
;
Cao YL (Cao, Yulian)
;
Gu YX (Gu, Yongxian)
;
Yang T (Yang, Tao)
Adobe PDF(722Kb)
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View/Download:1036/273
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Submit date:2013/04/02
Narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetector by changing the bias polarity
期刊论文
Zhang, Yanhua1 ; Ma, Wenquan1 ; Wei, Yang1 ; Cao, Yulian1 ; Huang, Jianliang1 ; Cui, Kai1 ; Guo, Xiaolu1, 2012, 卷号: 100, 期号: 17, 页码: 173511
Authors:
Zhang, Yanhua
;
Ma, Wenquan
;
Wei, Yang
;
Cao, Yulian
;
Huang, Jianliang
;
Cui, Kai
;
Guo, Xiaolu
Adobe PDF(866Kb)
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View/Download:716/147
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Submit date:2013/04/19
High structural quality of type II InAs/GaSb superlattices for very long wavelength infrared detection by interface control
期刊论文
IEEE Journal of Quantum Electronics, 2012, 卷号: 48, 期号: 4, 页码: 512-515
Authors:
Wei, Yang
;
Ma, Wenquan
;
Zhang, Yanhua
;
Huang, Jianliang
;
Cao, Yulian
;
Cui, Kai
Adobe PDF(823Kb)
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View/Download:681/174
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Submit date:2013/04/19
How to Use Type II InAs/GaSb Superlattice Structure to Reach Detection Wavelength of 2-3 mu m
期刊论文
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 卷号: 48, 期号: 10, 页码: 1322-1326
Authors:
Huang JL (Huang, Jianliang)
;
Ma WQ (Ma, Wenquan)
;
Wei Y (Wei, Yang)
;
Zhang YH (Zhang, Yanhua)
;
Cui K (Cui, Kai)
;
Cao YL (Cao, Yulian)
;
Guo XL (Guo, Xiaolu)
;
Shao J (Shao, Jun)
Adobe PDF(1090Kb)
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View/Download:781/193
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Submit date:2013/03/26
High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability
期刊论文
OPTICS LETTERS, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073
Authors:
Cao YL (Cao, Yulian)
;
Ji HM (Ji, Haiming)
;
Xu PF (Xu, Pengfei)
;
Gu YX (Gu, Yongxian)
;
Ma WQ (Ma, Wenquan)
;
Yang T (Yang, Tao)
Adobe PDF(206Kb)
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View/Download:705/198
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Submit date:2013/03/27
Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design
期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4, 页码: Article no.44201
Authors:
Xu PF
;
Yang T
;
Ji HM
;
Cao YL
;
Gu YX
;
Wang ZG
;
Xu, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. tyang@semi.ac.cn
Adobe PDF(614Kb)
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View/Download:1341/407
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Submit date:2011/07/05
Well Lasers
Dependence
Diode
Gain
一种制作高亮度半导体锥形激光器/放大器的方法
专利
专利类型: 发明, 申请日期: 2009-07-01, 公开日期: 3999
Inventors:
曹玉莲
;
陈良惠
Adobe PDF(1379Kb)
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View/Download:845/174
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Submit date:2010/03/19
Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Gyeongju, SOUTH KOREA, MAY 11-16, 2008
Authors:
Ji HM
;
Yang T
;
Cao YL
;
Ma WQ
;
Cao Q
;
Chen LH
;
Yang, T, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(244Kb)
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View/Download:1316/328
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Submit date:2010/03/09
Density-of-states