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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots 期刊论文
Nanoscale Research Letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Authors:  Li MF(李密锋)
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Inas Quantum Dots  Sacrificed Inas Layer  Molecular Beam Epitaxy  Reflection High-energy Electron  
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.16108
Authors:  Wang B;  Li ZC;  Yao R;  Liang M;  Yan FW;  Wang GH;  Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
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Gan-based  Led  Al Composition  Electron Blocking Layer  Temperature  Alloys  Movpe  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability 期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
Authors:  Zhao WJ;  Tan PH;  Liu J;  Ferrari AC;  Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
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Ferric-chloride  Charge-transfer  Single-layer  Graphene  Spectroscopy  Scattering  Spectra  
Port output of metallo-dielectric confined circular microlasers 期刊论文
OPTICS LETTERS, 2011, 卷号: 36, 期号: 8, 页码: 1374-1376
Authors:  Che KJ;  Huang YZ;  Xu HY;  Cai ZP;  Cai, ZP, Xiamen Univ, Inst Optoelect Technol, Dept Elect Engn, Xiamen 361005, Peoples R China. chekaijun@xmu.edu.cn;  zpcai@xmu.edu.cn
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Directional Emission  Wave-guides  Lasers  Resonator  Layer  
Theoretical investigation on the absorption enhancement of the crystalline silicon solar cells by pyramid texture coated with SiNx:H layer 期刊论文
SOLAR ENERGY, 2011, 卷号: 85, 期号: 3, 页码: 530-537
Authors:  Zhao L;  Zuo YH;  Zhou CL;  Li HL;  Diao HW;  Wang WJ;  Zhao, L, Chinese Acad Sci, Inst Elect Engn, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China. zhaolei@mail.iee.ac.cn
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Crystalline Silicon Solar Cell  Absorption Enhancement  Pyramid Texture  Sinx:h Layer  Coupled-wave Analysis  High-efficiency  Light  Fabrication  Gratings  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
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Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
An Effective Approach for Restraining Galvanic Corrosion of Polycrystalline Silicon by Hydrofluoric-Acid-Based Solutions 期刊论文
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2011, 卷号: 20, 期号: 2, 页码: 470-475
Authors:  Liu YF;  Xie J;  Zhang ML;  Yang JL;  Yang FH;  Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. jlyang@semi.ac.cn
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Galvanic Corrosion  Polysilicon  Resistivity  Titanium (Ti) Redox Sacrificial Layer  Polysilicon  Oxidation  
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: Article no.56104
Authors:  Tang HM;  Zheng ZS;  Zhang EX;  Yu F;  Li N;  Wang NJ;  Li GH;  Ma HZ;  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
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Separation By Oxygen Implantation  Buried Oxide  Nitrogen Implantation  Positive Charge Density  Radiation Hardness  Implanting Nitrogen  Ion-implantation  Improvement  Technology  Oxygen  Layer  
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer