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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
期刊论文
Nanoscale Research Letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Authors:
Li MF(李密锋)
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Submit date:2013/06/03
Inas Quantum Dots
Sacrificed Inas Layer
Molecular Beam Epitaxy
Reflection High-energy Electron
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 1, 页码: Article no.16108
Authors:
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
;
Wang, B, Chinese Acad Sci, Inst Semicond, Lighting R&D Ctr, Beijing 100083, Peoples R China. wangbing@semi.ac.cn
Adobe PDF(761Kb)
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View/Download:1533/374
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Submit date:2011/07/05
Gan-based
Led
Al Composition
Electron Blocking Layer
Temperature
Alloys
Movpe
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
;
Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
Adobe PDF(638Kb)
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View/Download:1206/233
  |  
Submit date:2012/02/06
Fundamental-band Gap
Indium Nitride
Buffer Layer
Dependence
Sapphire
Mocvd
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability
期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
Authors:
Zhao WJ
;
Tan PH
;
Liu J
;
Ferrari AC
;
Tan, PH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. phtan@semi.ac.cn
Adobe PDF(3069Kb)
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Submit date:2011/07/05
Ferric-chloride
Charge-transfer
Single-layer
Graphene
Spectroscopy
Scattering
Spectra
Port output of metallo-dielectric confined circular microlasers
期刊论文
OPTICS LETTERS, 2011, 卷号: 36, 期号: 8, 页码: 1374-1376
Authors:
Che KJ
;
Huang YZ
;
Xu HY
;
Cai ZP
;
Cai, ZP, Xiamen Univ, Inst Optoelect Technol, Dept Elect Engn, Xiamen 361005, Peoples R China. chekaijun@xmu.edu.cn
;
zpcai@xmu.edu.cn
Adobe PDF(445Kb)
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View/Download:1258/324
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Submit date:2011/07/05
Directional Emission
Wave-guides
Lasers
Resonator
Layer
Theoretical investigation on the absorption enhancement of the crystalline silicon solar cells by pyramid texture coated with SiNx:H layer
期刊论文
SOLAR ENERGY, 2011, 卷号: 85, 期号: 3, 页码: 530-537
Authors:
Zhao L
;
Zuo YH
;
Zhou CL
;
Li HL
;
Diao HW
;
Wang WJ
;
Zhao, L, Chinese Acad Sci, Inst Elect Engn, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China. zhaolei@mail.iee.ac.cn
Adobe PDF(879Kb)
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View/Download:1734/610
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Submit date:2011/07/05
Crystalline Silicon Solar Cell
Absorption Enhancement
Pyramid Texture
Sinx:h Layer
Coupled-wave Analysis
High-efficiency
Light
Fabrication
Gratings
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
;
Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
Adobe PDF(638Kb)
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View/Download:1846/425
  |  
Submit date:2011/07/05
Fundamental-band Gap
Indium Nitride
Buffer Layer
Dependence
Sapphire
Mocvd
An Effective Approach for Restraining Galvanic Corrosion of Polycrystalline Silicon by Hydrofluoric-Acid-Based Solutions
期刊论文
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2011, 卷号: 20, 期号: 2, 页码: 470-475
Authors:
Liu YF
;
Xie J
;
Zhang ML
;
Yang JL
;
Yang FH
;
Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. jlyang@semi.ac.cn
Adobe PDF(583Kb)
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View/Download:1217/270
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Submit date:2011/07/06
Galvanic Corrosion
Polysilicon
Resistivity
Titanium (Ti) Redox Sacrificial Layer
Polysilicon
Oxidation
Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: Article no.56104
Authors:
Tang HM
;
Zheng ZS
;
Zhang EX
;
Yu F
;
Li N
;
Wang NJ
;
Li GH
;
Ma HZ
;
Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
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View/Download:1072/289
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Submit date:2011/07/06
Separation By Oxygen Implantation
Buried Oxide
Nitrogen Implantation
Positive Charge Density
Radiation Hardness
Implanting Nitrogen
Ion-implantation
Improvement
Technology
Oxygen
Layer
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:
Deng Y
;
Zhao DG
;
Le LC
;
Jiang DS
;
Wu LL
;
Zhu JJ
;
Wang H
;
Liu ZS
;
Zhang SM
;
Yang H
;
Liang JW
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
Adobe PDF(311Kb)
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View/Download:1725/520
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Submit date:2011/07/05
Nitride Materials
Crystal Growth
Composition Fluctuations
X-ray Diffraction
Layer