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UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor 期刊论文
Chinese Journal of Luminescence, 2013, 卷号: 34, 期号: 11, 页码: 1413-1418
Authors:  YANG Sheng-xue;  GONG Jian;  LI Jing-bo;  XIA Jian-bai
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Mechanism of the improvement in microcrystalline silicon solar cells by hydrogen plasma treatment 期刊论文
Advanced Materials Research, 2013, 卷号: 773, 页码: 118-123
Authors:  Jing Yan Li, Xiang Bo Zeng, Hao Li, Xiao Bing Xie, Ping Yang, Hai Bo Xiao, Xiao Dong Zhang, Qi Ming Wang
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Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 5, 页码: 2915-2919
Authors:  Xu Y (Xu Ying);  Diao HW (Diao Hong-Wei);  Zhang SB (Zhang Shi-Bin);  Li XD (Li Xu-Dong);  Zeng XB (Zeng Xiang-Bo);  Wang WJ (Wang Wen-Jing);  Liao XB (Liao Xian-Bo);  Xu, Y, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
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Infrared Absorption Spectra  
微量掺碳ne-SiC:H薄膜用于p-i-n太阳电池的窗口层 期刊论文
物理学报, 2007, 卷号: 56, 期号: 5, 页码: 2915-2919
Authors:  许颖;  刁宏伟;  张世斌;  励旭东;  曾湘波;  王文静;  廖显伯
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具有复合埋层的新型SIMON材料的制备 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 7, 页码: 814-818
Authors:  易万兵;  陈猛;  张恩霞;  刘相华;  陈静;  董业民;  金波;  刘忠立;  王曦
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RTCVD工艺制备poly-Si薄膜太阳电池的研究 期刊论文
太阳能学报, 1998, 卷号: 19, 期号: 2, 页码: 152
Authors:  赵玉文;  李仲明;  何少琪;  王文静;  寥显伯;  盛殊然;  邓礼生;  潘广勤
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低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长 期刊论文
半导体学报, 1998, 卷号: 19, 期号: 3, 页码: 218
Authors:  陈博;  王圩;  汪孝杰;  张静媛;  朱洪亮;  周帆;  王玉田;  马朝华;  张子莹;  刘国利
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Microstructure and Magnetization Investigations of Cu-Doping Effect on La2CuO4+δ Crystal 期刊论文
Chinese Physics Letters, 1997, 卷号: 14, 期号: 3, 页码: 225
Authors:  Dong XL(董晓莉);  Zhao BR(赵柏儒);  Zhao ZX(赵忠贤);  Liu W(刘维);  Zhou L(周镭);  Xu B(许波);  Chen H(陈红);  Che GC(车广灿);  Ni YM(倪泳明);  Yin B(尹渤);  Li JW(李静维);  Zhao LH(赵立华);  Xu ZY(徐仲榆)
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1.5μm InGaAsP/InP脊型波导分布反馈激光器 期刊论文
半导体学报, 1989, 卷号: 10, 期号: 10, 页码: 794
Authors:  王圩;  张静媛;  田慧良;  谬育博;  汪孝杰;  马朝华;  王丽明;  吕卉;  高俊华;  高洪海
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一种对Ⅲ-Ⅴ氮化物进行n型和p型掺杂的方法 专利
专利类型: 发明, 专利号: CN200910241697.0, 公开日期: 2011-08-31
Inventors:  纪攀峰;  李京波;  闫建昌;  刘乃鑫;  刘喆;  王军喜;  李晋闽
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