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III-V族氮化物LED效率及微纳结构光谱特性研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  康俊杰
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Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 8, 页码: 083112
Authors:  Li, Z;  Kang, JJ;  Wang, BW;  Li, HJ;  Weng, YH;  Lee, YC;  Liu, ZQ;  Yi, XY;  Feng, ZC;  Wang, GH
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Stability of GaAs photocathodes under different intensities of illumination 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 10, 页码: 6109-6113
Authors:  Zou JJ (Zou Ji-Jun);  Chang BK (Chang Ben-Kang);  Yang Z (Yang Zhi);  Gao P (Gao Pin);  Qiao JL (Qiao Jian-Liang);  Zeng YP (Zeng Yi-Pine);  Chang, BK, Nanjing Univ Sci & Technol, Inst Elect Engn & Opto Elect Technol, Nanjing 210094, Peoples R China. 电子邮箱地址: bkchang@mail.njust.edu.cn
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Gaas Photocathode  
GaAs光电阴极在不同强度光照下的稳定性 期刊论文
物理学报, 2007, 卷号: 56, 期号: 10, 页码: 6109-6113
Authors:  邹继军;  常本康;  杨智;  高频;  乔建良;  曾一平
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缓冲层厚度对MOCVD法生长GaN外延薄膜性能的影响 期刊论文
人工晶体学报, 2005, 卷号: 34, 期号: 3, 页码: 466-470
Authors:  吴洁君;  韩修训;  李杰民;  黎大兵;  魏宏远;  康亭亭;  王晓晖;  刘祥林;  王占国
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Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85
Authors:  Wu, JJ;  Li, DB;  Lu, Y;  Han, XX;  Li, JM;  Wei, HY;  Kang, TT;  Wang, XH;  Liu, XL;  Zhu, QS;  Wang, ZG;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
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Cracks