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Earth-Abundant and Non-Toxic SiX (X = S, Se) Monolayers as Highly Efficient Thermoelectric Materials 期刊论文
Journal of Physical Chemistry B, 2017, 卷号: 121, 期号: 1, 页码: 123-128
Authors:  Ji-Hui Yang;  Qinghong Yuan;  Huixiong Deng;  Su-Huai Wei;  Boris I. Yakobson
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Focusing RKKY interaction by graphene P–N junction 期刊论文
2D Mater, 2017, 卷号: 4, 页码: 035005
Authors:  Shu-Hui Zhang;  Jia-Ji Zhu;  Wen Yang;  Kai Chang
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Hidden quantum mirage by negative refraction in semiconductor P-N junctions 期刊论文
Physical Review B, 2016, 卷号: 94, 期号: 8, 页码: 085408
Authors:  Shu-Hui Zhang;  Jia-Ji Zhu;  Wen Yang;  Hai-Qing Lin;  Kai Chang
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Hidden quantum mirage by negative refraction in semiconductor P-N junctions 期刊论文
Physical Review B, 2016, 卷号: 94, 期号: 8, 页码: 085408
Authors:  Shu-Hui Zhang;  Jia-Ji Zhu;  Wen Yang;  Hai-Qing Lin;  Kai Chang
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A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 098102
Authors:  Fu YC (Fu Ying-Chun);  Wang XF (Wang Xiao-Feng);  Fan ZC (Fan Zhong-Chao);  Yang X (Yang Xiang);  Bai YX (Bai Yun-Xia);  Zhang JY (Zhang Jia-Yong);  Ma HL (Ma Hui-Li);  Ji A (Ji An);  Yang FH (Yang Fu-Hua)
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Ultrafast photo-induced turning of magnetization and its relaxation dynamics in GaMnAs 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 5, 页码: 779-782
Authors:  Luo J (Luo Jing);  Zheng HZ (Zheng HouZhi);  Shen C (Shen Chao);  Zhang H (Zhang Hao);  Zhu K (Zhu Ke);  Zhu;  H (Zhu Hui);  Liu J (Liu Jian);  Li GR (Li GuiRong);  Ji Y (Ji Yang);  Zhao JH (Zhao JianHua);  Zheng, HZ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: hzzheng@red.semi.ac.cn
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Dilute Magnetic Semiconductor  Magneto-crystalline Anisotropy  Time-resolved Kerr Rotation  Coherent Precession  
STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2010, 卷号: 29, 期号: 2, 页码: 87-
Authors:  Yang W (Yang Wei);  Luo HH (Luo Hai-Hui);  Qian X (Qian Xuan);  Ji Y (Ji Yang);  Yang, W, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: jiyang@semi.ac.cn
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Microwave  Reflectance  Two-dimensional Electron Gas(2deg)  Cyclotron Resonance  Quantum-wells  Gaas/algaas Heterostructures  Germanium  Silicon  
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 17, 页码: Art. No. 171101
Authors:  Cao YL (Cao Yu-Lian);  Yang T (Yang Tao);  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Gu YX (Gu Yong-Xian);  Wang XD (Wang Xiao-Dong);  Wang Q (Wang Qing);  Ma WQ (Ma Wen-Quan);  Chen LH (Chen Liang-Hui);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
Adobe PDF(382Kb)  |  Favorite  |  View/Download:1288/412  |  Submit date:2010/05/24
Excited States  Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Laser Tuning  Optical Films  Quantum Dot Lasers  Silicon Compounds  Tantalum Compounds  Temperature-dependence  Threshold  Performance  Gain  
Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 054204
Authors:  Ji L (Ji Lian);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhang LQ (Zhang Li-Qun);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Duan LH (Duan Li-Hong);  Yang H (Yang Hui);  Ji, L, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jilian@red.semi.ac.cn;  smzhang@red.semi.ac.cn
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Diodes