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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文
ACS Nano., 2016, 卷号: 10, 期号: 3, 页码: 3852-3858
Authors:  Kenan Zhang;  Tianning Zhang;  Guanghui Cheng;  Tianxin Li;  Shuxia Wang;  Wei Wei;  Xiaohao Zhou;  Weiwei Yu;  Yan Sun;  Peng Wang;  Dong Zhang;  Changgan Zeng;  Xingjun Wang;  Weida Hu;  Hong Jin Fan;  Guozhen Shen;  Xin Chen;  Xiangfeng Duan;  Kai Chang;  Ning Dai
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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文
ACS Nano., 2016, 卷号: 10, 期号: 3, 页码: 3852-3858
Authors:  Kenan Zhang;  Tianning Zhang;  Guanghui Cheng;  Tianxin Li;  Shuxia Wang;  Wei Wei;  Xiaohao Zhou;  Weiwei Yu;  Yan Sun;  Peng Wang;  Dong Zhang;  Changgan Zeng;  Xingjun Wang;  Weida Hu;  Hong Jin Fan;  Guozhen Shen;  Xin Chen;  Xiangfeng Duan;  Kai Chang;  Ning Dai
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Direct growth of graphene on gallium nitride using C2H2 as carbon source 期刊论文
Frontiers of Physics, 2016, 卷号: 11, 期号: 2, 页码: 116803
Authors:  Bing Wang;  Yun Zhao;  Xiao-Yan Yi;  Guo-Hong Wang;  Zhi-Qiang Liu;  Rui-Rei Duan;  Peng Huang;  Jun-Xi Wang;  Jin-Min Li
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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures 期刊论文
ACS Nano., 2016, 卷号: 10, 期号: 3, 页码: 3852−3858
Authors:  Kenan Zhang;  Tianning Zhang;  Guanghui Cheng;  Tianxin Li;  Shuxia Wang;  Wei Wei;  Xiaohao Zhou;  Weiwei Yu;  Yan Sun;  Peng Wang;  Dong Zhang;  Changgan Zeng;  Xingjun Wang;  Weida Hu;  Hong Jin Fan;  Guozhen Shen;  Xin Chen;  Xiangfeng Duan;  Kai Chang;  Ning Dai
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Direct growth of graphene on gallium nitride using C2H2 as carbon source 期刊论文
Frontiers of Physics, 2015, 卷号: 11, 期号: 1, 页码: 116803
Authors:  Bing Wang;  Yun Zhao;  Xiao-Yan Yi;  Guo-Hong Wang;  Zhi-Qiang Liu;  Rui-Rei Duan;  Peng Huang;  Jun-Xi Wang;  Jin-Min Li
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金属有机物化学气相沉积装置 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-24, 2010-08-12
Inventors:  段瑞飞;  王军喜;  王国宏;  曾一平;  李晋闽
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Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 11, 页码: Art. No. 114215
Authors:  Zeng C (Zeng Chang);  Zhang SM (Zhang Shu-Ming);  Ji L (Ji Lian);  Wang HB (Wang Huai-Bing);  Zhao DG (Zhao De-Gang);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Jiang DS (Jiang De-Sheng);  Cao Q (Cao Qing);  Chong M (Chong Ming);  Duan LH (Duan Li-Hong);  Wang H (Wang Hai);  Shi YS (Shi Yong-Sheng);  Liu SY (Liu Su-Ying);  Yang H (Yang Hui);  Chen LH (Chen Liang-Hui);  Zeng, C, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: smzhang@red.semi.ac.cn
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Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 5, 页码: Art. No. 054204
Authors:  Ji L (Ji Lian);  Zhang SM (Zhang Shu-Ming);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhang LQ (Zhang Li-Qun);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Duan LH (Duan Li-Hong);  Yang H (Yang Hui);  Ji, L, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jilian@red.semi.ac.cn;  smzhang@red.semi.ac.cn
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Diodes  
Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  Zhang S (Zhang Shuang);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Duan LH (Duan Li-Hong);  Liu WB (Liu Wen-Bao);  Jiang DS (Jiang De-Sheng);  Yang H (Yang Hui);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Gan  
穿透型V形坑对GaN基p-i-n结构紫外探测器反向漏电的影响 期刊论文
物理学报, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  张爽;  赵德刚;  刘宗顺;  朱建军;  张书明;  王玉田;  段俐宏;  刘文宝;  江德生;  杨辉
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