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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions 期刊论文
Chinese Physics B, 2013, 卷号: 22, 期号: 9, 页码: 7302
Authors:  Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua
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A novel analytical method for designing microelectromechanical filters 期刊论文
Key Engineering Materials, 2013, 卷号: 562-565, 页码: 1281-1284
Authors:  Hui Zhao, Wei Luo, Jin Ling Yang, Fu Hua Yang
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A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9, 页码: 098102
Authors:  Fu YC (Fu Ying-Chun);  Wang XF (Wang Xiao-Feng);  Fan ZC (Fan Zhong-Chao);  Yang X (Yang Xiang);  Bai YX (Bai Yun-Xia);  Zhang JY (Zhang Jia-Yong);  Ma HL (Ma Hui-Li);  Ji A (Ji An);  Yang FH (Yang Fu-Hua)
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Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 8, 页码: 087303
Authors:  Xu XN (Xu Xiao-Na);  Wang XD (Wang Xiao-Dong);  Li YQ (Li Yue-Qiang);  Chen YL (Chen Yan-Ling);  Ji A (Ji An);  Zeng YP (Zeng Yi-Ping);  Yang FH (Yang Fu-Hua)
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Improvement of fabrication and characterization methods for micromechanical disk resonators 期刊论文
CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 10, 页码: 100702
Authors:  Zhao H (Zhao Hui);  Luo W (Luo Wei);  Zheng HY (Zheng Hai-Yang);  Yang JL (Yang Jin-Ling);  Yang FH (Yang Fu-Hua)
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增强型AlGaN/GaN HEMT器件工艺的研究进展 期刊论文
半导体技术, 2011, 卷号: 36, 期号: 10, 页码: 771-777
Authors:  杜彦东;  韩伟华;  颜伟;  张严波;  熊莹;  张仁平;  杨富华
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在本征砷化镓表面77K以下实现欧姆接触的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-03-17, 2010-08-12
Inventors:  谈笑天;  郑厚植;  刘 剑;  杨富华
Adobe PDF(316Kb)  |  Favorite  |  View/Download:1169/274  |  Submit date:2010/08/12
适用于激光共聚焦测量装置的光学窗口片 专利
专利类型: 实用新型, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  杨晋玲;  周美强;  周 威;  唐龙娟;  朱银芳;  杨富华
Adobe PDF(423Kb)  |  Favorite  |  View/Download:1994/418  |  Submit date:2010/08/12
基于RTD与EHEMT的超高速全并行模数转换器 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-02-10, 2010-08-12
Inventors:  戴 扬;  杜 睿;  杨富华
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Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films 期刊论文
SPECTROSCOPY AND SPECTRAL ANALYSIS, 2010, 卷号: 30, 期号: 4, 页码: 1002-1007
Authors:  Liang JR (Liang Ji-ran);  Hu M (Hu Ming);  Wang XD (Wang Xiao-dong);  Li GK (Li Gui-ke);  Kan Q (Kan Qiang);  Ji A (Ji An);  Yang FH (Yang Fu-hua);  Liu J (Liu Jian);  Wu NJ (Wu Nan-jian);  Chen HD (Chen Hong-da);  Liang, JR, Tianjin Univ, Coll Elect Sci & Technol, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China. 电子邮箱地址: liang_jiran@tju.edu.cn
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Nano Vo2 Thin Films