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Optimization of Hybrid Silicon Lasers for High-Speed Direct Modulation 期刊论文
IEEE Photonics Journal, 2015, 卷号: 7, 期号: 2, 页码: 1501013
Authors:  Yu Lian Cao;  Xiao Nan Hu;  Yuan Bing Cheng;  Hong Wang;  Qi Jie Wang
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A 10 Gb/s Directly-Modulated 1.3 mu m InAs/GaAs Quantum-Dot Laser 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 3, 页码: Art. No. 034209
Authors:  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-Fei);  Gu YX (Gu Yong-Xian);  Liu Y (Liu Yu);  Xie L (Xie Liang);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Room-temperature  Performance  
Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 49, 期号: 7, 页码: Art. No. 072103
Authors:  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-Fei);  Gu YX (Gu Yong-Xian);  Wang ZG (Wang Zhan-Guo);  Ji, HM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
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Dependence  Well  
Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 1, 页码: Art. No. 013102
Authors:  Xu PF (Xu Peng-Fei);  Yang T (Yang Tao);  Ji HM (Ji Hai-Ming);  Cao YL (Cao Yu-Lian);  Gu;  YX (Gu Yong-Xian);  Liu Y (Liu Yu);  Ma WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Energy States  Optical Modulation  Quantum Dot Lasers  Threshold Current  Well  Gain  
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2010, 卷号: 27, 期号: 2, 页码: Art. No. 027801
Authors:  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-Fei);  Gu YX (Gu Yong-Xian);  Ma;  WQ (Ma Wen-Quan);  Wang ZG (Wang Zhan-Guo);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: tyang@semi.ac.cn
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Threshold Current  Room-temperature  Dependence  Photoluminescence  
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 17, 页码: Art. No. 171101
Authors:  Cao YL (Cao Yu-Lian);  Yang T (Yang Tao);  Xu PF (Xu Peng-Fei);  Ji HM (Ji Hai-Ming);  Gu YX (Gu Yong-Xian);  Wang XD (Wang Xiao-Dong);  Wang Q (Wang Qing);  Ma WQ (Ma Wen-Quan);  Chen LH (Chen Liang-Hui);  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: tyang@semi.ac.cn
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Excited States  Gallium Arsenide  Iii-v Semiconductors  Indium Compounds  Laser Tuning  Optical Films  Quantum Dot Lasers  Silicon Compounds  Tantalum Compounds  Temperature-dependence  Threshold  Performance  Gain  
High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability 会议论文
Proceedings of SPIE-The International Society for Optical Engineering vol.7844: Art. No. 784404 2010, Beijing, PEOPLES R CHINA, OCT 18-19, 2010
Authors:  Cao YL (Cao Yu-Lian);  Xu PF (Xu Peng-fei);  Ji HM (Ji Hai-Ming);  Yang T (Yang Tao);  Chen LH (Chen Liang-Hui)
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Optical characteristics of DBR with inhomogeneous graded interfaces 期刊论文
ACTA PHYSICA SINICA, 2006, 卷号: 55, 期号: 10, 页码: 4983-4986
Authors:  Wang XD (Wang Xiao-Dong);  Wu XM (Wu Xu-Ming);  Wang Q (Wang Qing);  Cao YL (Cao Yu-Lian);  He GR (He Guo-Rong);  Tan MQ (Tan Man-Qing);  Wang, XD, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: wxd@semi.ac.cn
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Dbr  Reflectance Spectrum  Reflective Phase Shift  Characteristic Matrix Method  Surface-emitting-lasers  Distributed Bragg Reflectors  Threshold  
Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文
CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586
Authors:  Cao YL (Cao Yu-Lian);  Lian P (Lian Peng);  Ma WQ (Ma Wen-Quan);  Wang Q (Wang Qing);  Wu XM (Wu Xu-Ming);  He GR (He Guo-Rong);  Li H (Li Hui);  Wang XD (Wang Xiao-Dong);  Song GF (Song Guo-Feng);  Chen LH (Chen Liang-Hui);  Cao, YL, Chinese Acad Sci, Inst Semicond, Lab Nanooptoelect, Beijing 100083, Peoples R China. E-mail: caoyl@semi.ac.cn
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Vapor-phase Epitaxy  Diode-lasers  Interface Characteristics  Growth Sequence  Movpe Growth  Lp-movpe  Heterostructures  Heterojunction  Power  Nm  
MOCVD生长的高质量掺碳GaAs/AlGaAs材料的特性研究 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 1, 页码: 44
Authors:  廉鹏;  邹德恕;  高国;  殷涛;  陈昌华;  徐遵图;  陈建新;  沈光地;  曹青;  马骁宇;  陈良惠
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