SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films
Zhang F (Zhang Feng); Sun GS (Sun Guosheng); Huang HL (Huang Huolin); Wu ZY (Wu Zhengyun); Wang L (Wang Lei); Zhao WS (Zhao Wanshun); Liu XF (Liu Xingfang); Yan GG (Yan Guoguo); Zheng L (Zheng Liu); Dong L (Dong Lin); Zeng YP (Zeng Yiping)
2011
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume32Issue:12Pages:1722-1724
Subject Area半导体材料
Date Available2012-02-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/22909
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang F ,Sun GS ,Huang HL ,et al. High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(12):1722-1724.
APA Zhang F .,Sun GS .,Huang HL .,Wu ZY .,Wang L .,...&Zeng YP .(2011).High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films.IEEE ELECTRON DEVICE LETTERS,32(12),1722-1724.
MLA Zhang F ,et al."High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films".IEEE ELECTRON DEVICE LETTERS 32.12(2011):1722-1724.
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