High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films | |
Zhang F (Zhang Feng); Sun GS (Sun Guosheng); Huang HL (Huang Huolin); Wu ZY (Wu Zhengyun); Wang L (Wang Lei); Zhao WS (Zhao Wanshun); Liu XF (Liu Xingfang); Yan GG (Yan Guoguo); Zheng L (Zheng Liu); Dong L (Dong Lin); Zeng YP (Zeng Yiping) | |
2011 | |
Source Publication | IEEE ELECTRON DEVICE LETTERS
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Volume | 32Issue:12Pages:1722-1724 |
Subject Area | 半导体材料 |
Date Available | 2012-02-22 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/22909 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Zhang F ,Sun GS ,Huang HL ,et al. High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(12):1722-1724. |
APA | Zhang F .,Sun GS .,Huang HL .,Wu ZY .,Wang L .,...&Zeng YP .(2011).High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films.IEEE ELECTRON DEVICE LETTERS,32(12),1722-1724. |
MLA | Zhang F ,et al."High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films".IEEE ELECTRON DEVICE LETTERS 32.12(2011):1722-1724. |
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File Name/Size | DocType | Version | Access | License | ||
High-Performance 4H-(224KB) | 限制开放 | License | Application Full Text |
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