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Quantum coherence and entanglement induced by the continuum between distant localized states 期刊论文
PHYSICAL REVIEW A, 2011, 卷号: 83, 期号: 4, 页码: Article no.42112
Authors:  Ping J;  Li XQ;  Gurvitz S;  Ping, J, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
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Relaxation  Systems  Wells  Decay  
Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Authors:  Wang W;  Su SJ;  Zheng J;  Zhang GZ;  Xue CL;  Zuo YH;  Cheng BW;  Wang QM;  Cheng, BW, POB 912, Beijing 100083, Peoples R China.
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Germanium Tin Alloys  Germanium Buffer  Surface Morphology Evolution  Mass Transport  Surface  Growth  Evolution  Decay  
Decay lifetime and evolution of semiconductor quantum dots in photonic crystals 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 65-72
Authors:  Zhu ZY;  Li SS;  Li SS Chinese Acad Sci State Key Lab Superlattices & Microstruct Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Photonic Crystal  Decay Lifetime  Quantum Dots  Rabbi Oscillation  
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 1, 页码: Art. No. 011107
Authors:  Wang, BR;  Sun, BQ;  Ji, Y;  Dou, XM;  Xu, ZY;  Wang, ZM;  Salamo, GJ;  Wang, BR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址:
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Localized States  Islands  Wires  Superlattices  Organization  Gaas(100)  Excitons  Growth  Decay  Gaas  
Disentanglement of two qubits coupled to an XY spin chain: Role of quantum phase transition 期刊论文
PHYSICAL REVIEW A, 2007, 卷号: 76, 期号: 4, 页码: Art. No. 042118
Authors:  Yuan, ZG;  Zhang, P;  Li, SS;  Yuan, ZG, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
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Systems  Dynamics  Decay  
Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 期刊论文
THIN SOLID FILMS, 2006, 卷号: 498, 期号: 1-2, 页码: 188-192
Authors:  Kong LM;  Cai JF;  Wu ZY;  Gong Z;  Niu ZC;  Feng ZC;  Feng, ZC, Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei, Taiwan. E-mail:
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Time-resolved Photoluminescence  Inas Self-assembled Qds  Migration Of Carriers  1.3 Mu-m  Dependent Radiative Decay  Thermal Redistribution  Excitons  Recombination  Relaxation  Lifetimes  Emission  Epitaxy  Lasers  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
Authors:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Localized exciton dynamics in AlInGaN alloy 期刊论文
SOLID STATE COMMUNICATIONS, 2003, 卷号: 126, 期号: 8, 页码: 473-477
Authors:  Huang JS;  Dong X;  Luo XD;  Liu XL;  Xu ZY;  Ge WK;  Huang JS,POB 912 NLSM,Beijing 100083,Peoples R China.
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Alingan  Quantum Dots  Hopping  Stretched-exponential Decay  Multiple-quantum Wells  Light-emitting-diodes  Time-resolved Photoluminescence  Chemical-vapor-deposition  Thermal-activation  Luminescence  Transitions  Relaxation  Silicon  Layers  
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  Favorite  |  View/Download:1014/314  |  Submit date:2010/08/12
Nanostructures  Stretched Exponential  Time-resolved Photolummescence  Metalorganic Vapor Phase Epitaxy  Nitrides  Inalgan  Inxalyga1-x-yn Quaternary Alloys  Time-resolved Photoluminescence  Multiple-quantum Wells  Alingan/gan Heterostructures  Gan  Decay  Luminescence  Sapphire  Devices  Silicon