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Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor 期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2014, 卷号: 2, 期号: 22, 页码: 4401-4405
Authors:  Huang, JS;  Yen, WC;  Lin, SM;  Lee, CY;  Wu, J;  Wang, ZM;  Chin, TS;  Chueh, YL
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Memristor-Integrated Voltage-Stabilizing Supercapacitor System 期刊论文
ADVANCED MATERIALS, 2014, 卷号: 26, 期号: 29, 页码: 4999-5004
Authors:  Liu, B;  Liu, BY;  Wang, XF;  Wu, XH;  Zhao, WN;  Xu, ZM;  Chen, D;  Shen, GZ
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Structure and properties of InAs/AlAs quantum dots for broadband emission 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 10, 页码: Art. No. 103515
Authors:  Meng XQ (Meng X. Q.);  Jin P (Jin P.);  Liang ZM (Liang Z. M.);  Liu FQ (Liu F. Q.);  Wang ZG (Wang Z. G.);  Zhang ZY (Zhang Z. Y.);  Meng, XQ, Wuhan Univ, Key Lab Artificial Micro & Nano Struct, Minist Educ, Wuhan 430072, Peoples R China.
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Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 12, 页码: Article no.124211
Authors:  Jin LA;  Jiang DS;  Zhang ZM;  Liu ZS;  Zeng C;  Zhao DG;  Zhu JJ;  Wang H;  Duan LH;  Yang H;  Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Ingan  Laser Diode  Delay Effect  Saturable Absorber  Traps  Light Emission  
量子点光调制器有源区结构 专利
专利类型: 发明, 申请日期: 2009-04-22, 公开日期: 3992
Inventors:  梁志梅;  金 鹏;  王占国
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Electronic and Mechanical Coupling in Bent ZnO Nanowires 期刊论文
ADVANCED MATERIALS, 2009, 卷号: 21, 期号: 48, 页码: 4937
Authors:  Han XB;  Kou LZ;  Lang XL;  Xia JB;  Wang N;  Qin R;  Lu J;  Xu J;  Liao ZM;  Zhang XZ;  Shan XD;  Song XF;  Gao JY;  Guo WL;  Yu DP;  Guo, WL, Nanjing Univ Aeronaut & Astronaut, Inst Nanosci, Nanjing 210016, Peoples R China. E-mail Address:;
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Quantum Wires  Si Substrate  Strain  Arrays  Photoluminescence  Silicon  
Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017802
Authors:  Liang ZM;  Jin C;  Jin P;  Wu J;  Wang ZG;  Liang ZM Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address:
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Excitation Dependence  Line-shape  Photoluminescence  Deposition  Heterostructures  Epitaxy  
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 1, 页码: Art. No. 011107
Authors:  Wang, BR;  Sun, BQ;  Ji, Y;  Dou, XM;  Xu, ZY;  Wang, ZM;  Salamo, GJ;  Wang, BR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址:
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Localized States  Islands  Wires  Superlattices  Organization  Gaas(100)  Excitons  Growth  Decay  Gaas  
Optical properties of InGaAs/GaAs quantum chains 期刊论文
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 3, 页码: 1908-1912
Authors:  Wang, BR;  Sun, Z;  Xu, ZY;  Sun, BQ;  Ji, Y;  Wang, ZM;  Salamo, GJ;  Wang, BR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址:
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Ingaas/gaas  Quantum Dots  Quantum Chains  
Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing 期刊论文
CHINESE OPTICS LETTERS, 2008, 卷号: 6, 期号: 2, 页码: 108-111
Authors:  Li AK;  Wang ZM;  Liu JJ;  Zeng XY;  Wang CX;  Chen HD;  Li AK Huazhong Univ Sci & Technol Wuhan Natl Lab Optoelect Wuhan 430074 Peoples R China. E-mail Address:
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Optical Wave-guides  Sol-gel Method  Femtosecond Laser  Films  Composite