SEMI OpenIR

Browse/Search Results:  1-10 of 11 Help

Selected(0)Clear Items/Page:    Sort:
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(343Kb)  |  Favorite  |  View/Download:1855/418  |  Submit date:2011/07/05
Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots 期刊论文
VACUUM, 2005, 卷号: 77, 期号: 3, 页码: 307-314
Authors:  Han, XX;  Li, JM;  Wu, JJ;  Wang, XH;  Li, DB;  Liu, XL;  Han, PD;  Zhu, QS;  Wang, ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
Adobe PDF(406Kb)  |  Favorite  |  View/Download:887/282  |  Submit date:2010/03/17
Nanostructure  
Alloy compositional fluctuation in InAlGaN epitaxial films 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 卷号: 80, 期号: 3, 页码: 649-652
Authors:  Li, DB;  Dong, X;  Huang, J;  Liu, X;  Xu, Z;  Zhang, Z;  Wang, Z;  Li, DB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dbli@red.semi.ac.cn
Adobe PDF(835Kb)  |  Favorite  |  View/Download:916/275  |  Submit date:2010/03/17
Multiple-quantum Wells  
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
Authors:  Wu JJ;  Han XX;  Li JM;  Li DB;  Lu Y;  Wei HY;  Cong GW;  Liu XL;  Zhu QS;  Wang ZG;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
Adobe PDF(242Kb)  |  Favorite  |  View/Download:1128/406  |  Submit date:2010/03/17
Cracks  
Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 266, 期号: 4, 页码: 423-428
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
Adobe PDF(290Kb)  |  Favorite  |  View/Download:973/278  |  Submit date:2010/03/09
Nanostructure  
Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 263, 期号: 1-4, 页码: 4-11
Authors:  Lu Y;  Liu XL;  Wang XH;  Lu DC;  Li DB;  Han XX;  Cong GW;  Wang ZG;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@red.semi.ac.cn
Adobe PDF(444Kb)  |  Favorite  |  View/Download:1537/701  |  Submit date:2010/03/09
Substrates  
Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure 期刊论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2004, 卷号: 241, 期号: 13, 页码: 3000-3008
Authors:  Han XX;  Li DB;  Yuan HR;  Sun XH;  Liu XL;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
Adobe PDF(269Kb)  |  Favorite  |  View/Download:1395/304  |  Submit date:2010/03/09
Field-effect Transistors  
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85
Authors:  Wu, JJ;  Li, DB;  Lu, Y;  Han, XX;  Li, JM;  Wei, HY;  Kang, TT;  Wang, XH;  Liu, XL;  Zhu, QS;  Wang, ZG;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
Adobe PDF(408Kb)  |  Favorite  |  View/Download:981/244  |  Submit date:2010/03/17
Cracks  
Growth and photoluminescence of InAlGaN films 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang ZG;  Li DB Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)  |  Favorite  |  View/Download:998/347  |  Submit date:2010/10/29
Multiple-quantum Wells  Quaternary Alloys  Optical-properties  
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  Favorite  |  View/Download:978/314  |  Submit date:2010/08/12
Nanostructures  Stretched Exponential  Time-resolved Photolummescence  Metalorganic Vapor Phase Epitaxy  Nitrides  Inalgan  Inxalyga1-x-yn Quaternary Alloys  Time-resolved Photoluminescence  Multiple-quantum Wells  Alingan/gan Heterostructures  Gan  Decay  Luminescence  Sapphire  Devices  Silicon