SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate
Li DB; Dong X; Huang JS; Liu XL; Xu ZY; Wang XH; Zhang Z; Wang ZG; Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
2003
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume249Issue:1-2Pages:72-77
AbstractQuaternary InAlGaN film has been grown directly on top of low-temperature-deposited GaN buffer layer by low-pressure metalorganic vapor phase epitaxy. High-resolution X-ray diffraction and photoluminescence (PL) results show that the film has good crystal quality and optical property. Temperature-dependent PL and time-resolved PL (TRPL) have been employed to study the carriers recombination dynamics in the film. The TRPL signals can be well fitted as a stretched exponential function exp[-(t/tau)(beta)] from 14 to 250 K, indicating that the emission is attributed to the radiative recombination of excitons localized in disorder quantum nanostructures such as quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-sectional high-resolution electron microscopy measurement further proves that there exist the disorder quantum nanostructures in the quaternary. By investigating the dependence of the exponential parameter beta on the temperature, it is shown that the multiple trapping-detrapping mechanism dominates the diffusion among the localized states. The localized states are considered to have two-dimensional density of states (DOS) at 250 K, since radiative recombination lifetime tau(r) increases linearly with increasing temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, key lab semicond mat, beijing 100083, peoples r china; chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst phys, beijing lab electron microscopy, beijing 100080, peoples r china
KeywordNanostructures Stretched Exponential Time-resolved Photolummescence Metalorganic Vapor Phase Epitaxy Nitrides Inalgan Inxalyga1-x-yn Quaternary Alloys Time-resolved Photoluminescence Multiple-quantum Wells Alingan/gan Heterostructures Gan Decay Luminescence Sapphire Devices Silicon
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/11670
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Li DB,Dong X,Huang JS,et al. Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate[J]. JOURNAL OF CRYSTAL GROWTH,2003,249(1-2):72-77.
APA Li DB.,Dong X.,Huang JS.,Liu XL.,Xu ZY.,...&Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China..(2003).Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate.JOURNAL OF CRYSTAL GROWTH,249(1-2),72-77.
MLA Li DB,et al."Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate".JOURNAL OF CRYSTAL GROWTH 249.1-2(2003):72-77.
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