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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 11, 页码: 4982-4988
Authors:  Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 11, 页码: 4982-4988
Authors:  Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
Adobe PDF(1780Kb)  |  Favorite  |  View/Download:8/0  |  Submit date:2020/07/30
弛豫SiGe衬底上SiGe/Si Ⅱ型量子阱 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 7, 页码: 875
Authors:  李代宗;  黄昌俊;  于卓;  成步文;  余金中;  王启明
Adobe PDF(366Kb)  |  Favorite  |  View/Download:843/274  |  Submit date:2010/11/23
InGaAs/GaAs多量子阱SEED设计和特性研究 期刊论文
光电子·激光, 2001, 卷号: 12, 期号: 3, 页码: 222
Authors:  邓晖;  陈弘达;  梁琨;  杜云;  唐君;  黄永箴;  潘钟;  马骁宇;  吴荣汉;  王启明
Adobe PDF(301Kb)  |  Favorite  |  View/Download:788/249  |  Submit date:2010/11/23
InGaAs/GaAs多量子阱 SEED面阵结构特性与设计(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 2, 页码: 113
Authors:  邓晖;  陈弘达;  梁琨;  杜云;  唐君;  黄永箴;  潘钟;  马晓宇;  吴荣汉;  王启明
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Si_(1-x-y)Ge_xC_y三元系材料的应变补偿特性 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 1, 页码: 53
Authors:  于卓;  李代宗;  成步文;  黄昌俊;  雷震霖;  余金中;  王启明;  梁骏吾
Adobe PDF(201Kb)  |  Favorite  |  View/Download:836/274  |  Submit date:2010/11/23
用固相外延方法制备Si1-x-yGexCy 三元材料 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 9, 页码: 862-866
Authors:  于卓;  李代宗;  成步文;  黄昌俊;  雷震霖;  余金中;  王启明;  梁骏吾
Adobe PDF(217Kb)  |  Favorite  |  View/Download:415/86  |  Submit date:2014/05/15
Annealing Behavior of Si_(1-x)Ge_x/Si Heterostructures 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 10, 页码: 962
Authors:  Yu Z(于卓);  Li DZ(李代宗);  Cheng BW(成步文);  Li C(李成);  Lei ZL(雷震霖);  Huang CJ(黄昌俊);  Zhang CH(张春辉);  Yu JZ(余金中);  Wang QM(王启明);  Liang JW(梁骏吾)
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UHV/CVD外延生长SiGe/Si表面反应动力学 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 6, 页码: 564
Authors:  于卓;  李代宗;  成步文;  黄昌俊;  雷震霖;  余金中;  王启明;  梁骏吾
Adobe PDF(337Kb)  |  Favorite  |  View/Download:1092/305  |  Submit date:2010/11/23
Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 4, 页码: 313
Authors:  Cheng BW(成步文);  Li DZ(李代宗);  Huang CJ(黄昌俊);  Zhang CH(张春晖);  Yu Z(于卓);  Yu JZ(余金中);  Wang QM(王启明)
Adobe PDF(197Kb)  |  Favorite  |  View/Download:832/253  |  Submit date:2010/11/23