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Competitive conductive mechanism of interstitial Ag and oxygen vacancies in Ag/Ta 2 O 5 /Pt stack 期刊论文
Journal of Applied Physics, 2019, 卷号: 126, 期号: 6, 页码: 065104
Authors:  Qi Hu;   Zhiqiang Fan;   Anping Huang;   Xinjiang Zhang;   Rumeng Zhao;   Qin Gao;   Yuhang Ji;   Wenzhen Dou;   Mei Wang;   Hongliang Shi;   Zhisong Xiao;   Xiangwei Jiang;   Paul K. Chu
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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 11, 页码: 4982-4988
Authors:  Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
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Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
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Multiscale simulation of lateral charge loss in Si 3 N 4 3D NAND flash based on density functional theory 期刊论文
Journal of Physics D: Applied Physics, 2019, 卷号: 52, 页码: 395103
Authors:  Jixuan Wu ;   Jiezhi Chen ;   Xiangwei Jiang
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Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors 期刊论文
Applied Physics Express, 2019, 卷号: 12, 页码: 034001
Authors:  Jixuan Wu ;   Xiaolei Ma ;   Jiezhi Chen ;   Xiangwei Jiang
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Characterizing the Charge Trapping across Crystalline and Amorphous Si/SiO 2 /HfO 2 Stacks from First-Principle Calculations 期刊论文
PHYSICAL REVIEW APPLIED, 2019, 卷号: 12, 页码: 064012
Authors:  Yue-Yang Liu;   Feilong Liu;   Runsheng Wang;   Jun-Wei Luo;   Xiangwei Jiang ;   Ru Huang;   Shu-Shen Li;   Lin-Wang Wang
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Ab Initio Investigation of Charge Trapping Across the Crystalline-Si–Amorphous-SiO 2 Interface 期刊论文
Physical Review Applied, 2019, 卷号: 11, 页码: 044058
Authors:  Yue-Yang Liu;   Fan Zheng;   Xiangwei Jiang;   Jun-Wei Luo;   Shu-Shen Li;   Lin-Wang Wang
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Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering 期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: 66, 期号: 11, 页码: 4982-4988
Authors:  Yuxiong Long;   Jun Z. Huang;   Qianqian Huang;   Member,IEEE ;   Nuo Xu ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Zhi-Chuan Niu ;   David Esseni ;   Fellow,IEEE ;   Ru Huang;   Fellow,IEEE ;   Shu-Shen Li
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Nanoelectromechanical Switches by Controlled Switchable Cracking 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 7, 页码: 1209-1212
Authors:  Qiang Luo;   Zhe Guo;   Houbing Huang;   Qiming Zou ;   Xiangwei Jiang ;   Shuai Zhang;   Hongjuan Wang ;  Min Song;   Bao Zhang;   Hong Chen;   Haoshuang Gu;   Genquan Han ;   Xiaofei Yang;   Xuecheng Zou ;  Kai-You Wang;   Zhiqi Liu;   Jeongmin Hong ;   Ramamoorthy Ramesh;   Long You
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Improved Performance in GeSn/SiGeSn TFET by Hetero-Line Architecture With Staggered Tunneling Junction 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 4, 页码: 1985-1989
Authors:  Hongjuan Wang ;   Genquan Han ;   Member,IEEE ;   Xiangwei Jiang ;   Member,IEEE ;   Yan Liu ;   Jincheng Zhang;   Yue Hao;   Senior Member,IEEE
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