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Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL) 期刊论文
Infrared Physics & Technology, 2018, 卷号: 89, 页码: 147-153
Authors:  Chunyan Guo ;   Yaoyao Sun ;   Zhe Jia ;   Zhi Jiang ;   Yuexi Lv ;   Hongyue Hao ;   Xi Han ;   Yinan Dong ;   Dongwei Jiang ;   Guowei Wang ;   Yingqiang Xu ;   Tao Wang ;   Jinshou Tian ;   Zhaoxin Wu ;   Zhichuan Niu
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锑化物红外探测器工艺制备与表征 学位论文
, 北京: 中国科学院半导体研究所, 2017
Authors:  郝宏玥
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Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice 期刊论文
Infrared Physics & Technology, 2017, 卷号: 89, 页码: 35–40
Authors:  Xi Han;  Dongwei Jiang;  Guowei Wang;  Hongyue Hao;  Yaoyao Sun;  Zhi Jiang;  Yuexi Lv;  Chunyan Guo;  Yingqiang Xu;  Zhichuan Niu
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Significantly extended cutoff wavelength of very long-wave infrared detectors based on InAs/GaSb/InSb/GaSb superlattices 期刊论文
Appl. Phys. Lett., 2017, 卷号: 111, 页码: 161101
Authors:  Dongwei Jiang;  Xi Han;  Hongyue Hao;  Yaoyao Sun;  Zhi Jiang;  Yuexi Lv;  Chunyan Guo;  Guowei Wang;  Yingqiang Xu;  Yang Yu;  Zhichuan Niu
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320 _ 256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice 期刊论文
Infrared Physics & Technology, 2017, 卷号: 82, 页码: 140–143
Authors:  Sun Yaoyao;  Han Xi;  Hao Hongyue;  Jiang Dongwei;  Guo Chunyan;  Jiang Zhi;  Lv Yuexi;  Wang Guowei;  Xu Yingqiang;  Niu Zhichuan ⇑
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320 _ 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice 期刊论文
Superlattices and Microstructures, 2017, 卷号: 111, 页码: 783-788
Authors:  Yaoyao Sun;  GuoweiWang;  Xi Han;  Wei Xiang;  Dongwei Jiang;  Zhi Jiang;  Hongyue Hao;  Yuexi Lv;  Chunyan Guo;  Yingqiang Xu;  Zhichuan Niu
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InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文
Journal of Crystal Growth, 2016, 卷号: 443, 页码: 85-89
Authors:  Wei Xiang;  Guowei Wang;  Hongyue Hao;  Yongping Liao;  Xi Han;  Lichun Zhang;  Yingqiang Xu;  Zhengwei Ren;  Haiqiao Ni;  Zhenhong He;  Zhichuan Niu
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Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm 期刊论文
Applied Physics Letters, 2016, 卷号: 108, 期号: 12, 页码: 121110
Authors:  Dongwei Jiang;  Wei Xiang;  Fengyun Guo;  Hongyue Hao;  Xi Han;  Xiaochao Li;  Guowei Wang;  Yingqiang Xu;  Qingjiang Yu;  Zhichuan Niu
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Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice 期刊论文
APPLIED PHYSICS LETTERS, 2015, 卷号: 106, 页码: 192402
Authors:  Yuan Li;  Yu Liu;  Laipan Zhu;  Xudong Qin;  Qing Wu;  Wei Huang;  Zhichuan Niu;  Wei Xiang;  Hongyue Hao;  Yonghai Chen
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一种半导体光电器件的表面钝化方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  郝宏玥;  王国伟;  向伟;  蒋洞微;  邢军亮;  徐应强;  牛智川
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