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320 _ 256 high operating temperature mid-infrared focal plane arrays based on type-II InAs/GaSb superlattice 期刊论文
Superlattices and Microstructures, 2017, 卷号: 111, 页码: 783-788
Authors:  Yaoyao Sun;  GuoweiWang;  Xi Han;  Wei Xiang;  Dongwei Jiang;  Zhi Jiang;  Hongyue Hao;  Yuexi Lv;  Chunyan Guo;  Yingqiang Xu;  Zhichuan Niu
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2~5μm InAs/GaSb超晶格红外探测器 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Authors:  徐应强;  汤宝;  王国伟;  任正伟;  牛智川
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图形衬底量子线生长制备与荧光特性研究 期刊论文
物理学报, 2011, 卷号: 60, 期号: 2, 页码: 020703-1-020703-5
Authors:  王秀平;  杨晓红;  韩勤;  鞠研玲;  杜云;  朱彬;  王杰;  倪海桥;  贺继方;  王国伟;  牛智川
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GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 2, 页码: Art. No. 028102
Authors:  Tang B;  Xu YQ;  Zhou ZQ;  Hao RT;  Wang GW;  Ren ZW;  Niu ZC;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn
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Inas/ga1-xinxsb Superlattice  Gasb  Heterojunctions  Photodiodes  Segregation  Layers  Inas  Alsb  
HPT结构的InAs/GaSb超晶格红外光电探测器 专利
专利类型: 发明, 专利号: CN201010123021.4, 公开日期: 2011-08-31
Inventors:  张宇;  王国伟;  汤宝;  任正伟;  徐应强;  牛智川;  陈良惠
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