SEMI OpenIR

Browse/Search Results:  1-6 of 6 Help

  Show only claimed items
Selected(0)Clear Items/Page:    Sort:
2μm波段GaSb基量子阱大功率激光器研究 学位论文
, 北京: 中国科学院大学, 2017
Authors:  廖永平
Adobe PDF(10313Kb)  |  Favorite  |  View/Download:388/67  |  Submit date:2017/05/31
InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate 期刊论文
Journal of Crystal Growth, 2016, 卷号: 443, 页码: 85-89
Authors:  Wei Xiang;  Guowei Wang;  Hongyue Hao;  Yongping Liao;  Xi Han;  Lichun Zhang;  Yingqiang Xu;  Zhengwei Ren;  Haiqiao Ni;  Zhenhong He;  Zhichuan Niu
Adobe PDF(1528Kb)  |  Favorite  |  View/Download:115/2  |  Submit date:2017/03/16
Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 4, 页码: 045204
Authors:  Dan Su;  Xiuming Dou;  Xuefei Wu;  Yongping Liao;  Pengyu Zhou;  Kun Ding;  Haiqiao Ni;  Zhichuan Niu;  Haijun Zhu;  Desheng Jiang;  Baoquan Sun
Adobe PDF(1402Kb)  |  Favorite  |  View/Download:102/1  |  Submit date:2017/03/16
Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress 期刊论文
AIP Advances, 2016, 卷号: 6, 期号: 4, 页码: 045204
Authors:  Dan Su;  Xiuming Dou;  Xuefei Wu;  Yongping Liao;  Pengyu Zhou;  Kun Ding;  Haiqiao Ni;  Zhichuan Niu;  Haijun Zhu;  Desheng Jiang;  Baoquan Sun
Adobe PDF(1302Kb)  |  Favorite  |  View/Download:338/2  |  Submit date:2017/03/16
一种集成半导体激光器的制备方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  杨成奥;  张宇;  廖永平;  徐应强;  牛智川
Adobe PDF(779Kb)  |  Favorite  |  View/Download:203/4  |  Submit date:2016/09/12
一种半导体激光器及其制备方法 专利
专利类型: 发明, 公开日期: 2016-09-12
Inventors:  杨成奥;  张宇;  廖永平;  魏思航;  徐应强;  牛智川
Adobe PDF(575Kb)  |  Favorite  |  View/Download:195/6  |  Submit date:2016/09/12