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Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 3, 页码: 444-447
Authors:  Hongjuan Wang;   Xiangwei Jiang ;   Member, IEEE ;   Nuo Xu;   Member, IEEE ;   Genquan Han ;   Member, IEEE ;   Yue Hao;   Senior Member, IEEE ;   Shu-Shen Li;   David Esseni;   Fellow, IEEE
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Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction 期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: 56, 期号: 4, 页码: 04CD07
Authors:  Hongjuan Wang;  Genquan Han;  Xiangwei Jiang;  Yan Liu;  Chunfu Zhang;  Jincheng Zhang;  and Yue Hao
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Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain 期刊论文
AIP ADVANCES, 2015, 卷号: 5, 页码: 057145
Authors:  Genquan Han;  Yibo Wang;  Yan Liu;  Hongjuan Wang;  Mingshan Liu;  Chunfu Zhang;  Jincheng Zhang;  Buwen Cheng;  Yue Hao
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Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文
International Journal of Thermophysics, 2015, 卷号: 36, 页码: 980–986
Authors:  Yan Liu;  Jing Yan;  Hongjuan Wang;  Buwen Cheng;  Genquan Han
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Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 11, 页码: 115027
Authors:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
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Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Authors:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
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Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Authors:  Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation 期刊论文
SOLID-STATE ELECTRONICS, 2013, 卷号: 83, 页码: 66-70
Authors:  Wang, Lanxiang;  Su, Shaojian;  Wang, Wei;  Gong, Xiao;  Yang, Yue;  Guo, Pengfei;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Han, Genquan;  Yeo, Yee-Chia
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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Authors:  Gong, Xiao;  Han, Genquan;  Liu, Bin;  Wang, Lanxiang;  Wang, Wei;  Yang, Yue;  Kong, Eugene Yu-Jin;  Su, Shaojian;  Xue, Chunlai);  Cheng, Buwen;  Yeo, Yee-Chia
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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Authors:  Gong, Xiao;  Han, Genquan;  Bai, Fan;  Su, Shaojian;  Guo, Pengfei;  Yang, Yue;  Cheng, Ran;  Zhang, Dongliang;  Zhang, Guangze;  Xue, Chunlai;  Cheng, Buwen;  Pan, Jisheng;  Zhang, Zheng;  Tok, Eng Soon;  Antoniadis, Dimitri;  Yeo, Yee-Chia
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