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Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain 期刊论文
AIP ADVANCES, 2015, 卷号: 5, 页码: 057145
Authors:  Genquan Han;  Yibo Wang;  Yan Liu;  Hongjuan Wang;  Mingshan Liu;  Chunfu Zhang;  Jincheng Zhang;  Buwen Cheng;  Yue Hao
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Mobility enhancement in undoped Ge0.92Sn0.08 quantum well p-channel metal-oxide-emiconductor field-effect transistor fabricated on (111)-oriented substrate 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 卷号: 29, 期号: 11, 页码: 115027
Authors:  Liu, Yan;  Yan, Jing;  Liu, Mingshan;  Wang, Hongjuan;  Zhang, Qingfang;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
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Strained GeSn p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors With In Situ 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 卷号: 61, 期号: 11, 页码: 3639-3645
Authors:  Liu, Yan;  Yan, Jing;  Wang, Hongjuan;  Zhang,Qingfang;  Liu, Mingshan;  Zhao, Bin;  Zhang, Chunfu;  Cheng, Buwen;  Hao, Yue;  Han, Genquan
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