SEMI OpenIR  > 半导体超晶格国家重点实验室
Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction
Hongjuan Wang; Genquan Han; Xiangwei Jiang; Yan Liu; Chunfu Zhang; Jincheng Zhang; and Yue Hao
2017
Source PublicationJapanese Journal of Applied Physics
Volume56Issue:4Pages:04CD07
Subject Area半导体物理
Indexed BySCI
Date Available2018-06-15
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/28555
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Hongjuan Wang,Genquan Han,Xiangwei Jiang,et al. Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction[J]. Japanese Journal of Applied Physics,2017,56(4):04CD07.
APA Hongjuan Wang.,Genquan Han.,Xiangwei Jiang.,Yan Liu.,Chunfu Zhang.,...&and Yue Hao.(2017).Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction.Japanese Journal of Applied Physics,56(4),04CD07.
MLA Hongjuan Wang,et al."Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction".Japanese Journal of Applied Physics 56.4(2017):04CD07.
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