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Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 卷号: 113, 页码: 144-147
Authors:  Yang, Xiaoguang;  Wang, Kefan;  Gu, Yongxian;  Ni, Haiqiao;  Wang, Xiaodong;  Yang, Tao;  Wang, Zhanguo
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量子点中间带和黑硅太阳电池研究 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  王科范
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Influence of thermal treatment temperatures on CdTe nanocrystal films and photoelectric properties of ITO/CdTe/Al 期刊论文
Journal of Semiconductors, 2012, 卷号: 33, 期号: 9, 页码: 094002
Authors:  Xu, Wenqing;  Qu, Shengchun;  Wang, Kefan;  Bi, Yu;  Liu, Kon;  Wang, Zhanguo
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Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: Article no.75010
Authors:  Yang XG;  Yang T;  Wang KF;  Ji HM;  Ni HQ;  Niu ZC;  Wang ZG;  Yang, XG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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High-density  Temperature-dependence  Self-formation  Layers  Well  Mbe  
Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 3, 页码: Article no.38401
Authors:  Yang XG;  Yang T;  Wang KF;  Gu YX;  Ji HM;  Xu PF;  Ni HQ;  Niu ZC;  Wang XD;  Chen YL;  Wang ZG;  Yang, T, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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硅掺杂的砷化铟/砷化镓量子点太阳电池的制作方法 专利
专利类型: 发明, 专利号: CN102130206A, 公开日期: 2012-09-09, 2012-09-09, 2012-09-09
Inventors:  王科范;  杨晓光;  杨涛;  王占国
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磷化镓铝应力补偿的砷化铟量子点太阳电池制作方法 专利
专利类型: 发明, 专利号: CN201010217374.0, 公开日期: 2011-08-31
Inventors:  王科范;  杨晓光;  杨涛;  王占国
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制备超饱和硫系元素掺杂硅的方法 专利
专利类型: 发明, 公开日期: 2013-02-20, 2013-02-20
Inventors:  王科范;  刘孔;  曲胜春;  王占国
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一种超饱和掺杂半导体薄膜的制备方法 专利
专利类型: 发明, 公开日期: 2013-08-28
Inventors:  王科范;  张华荣;  彭成晓;  曲胜春;  王占国
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硫族元素超饱和掺杂硅红外探测器及其制作方法 专利
专利类型: 发明, 公开日期: 2014-04-30
Inventors:  王科范;  彭成晓;  刘孔;  谷城;  曲胜春;  王占国
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