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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:  Wang LJ;  Zhang SM;  Zhu JH;  Zhu JJ;  Zhao DG;  Liu ZS;  Jiang DS;  Wang YT;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(699Kb)  |  Favorite  |  View/Download：1390/361  |  Submit date：2010/04/05
Gan  Light Emitting Diode  Surface Treatment  Leakage Current  Threading Dislocation Densities  Layers  Ni/au  Leds  
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 076104
Authors:  Wang LJ;  Zhang SM;  Wang YT;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang H;  Shi YS;  Liu SY;  Yang H;  Zhang SM Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(368Kb)  |  Favorite  |  View/Download：1593/542  |  Submit date：2010/03/08
Densities  Crystals  Layers  
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 4, 页码: 677-679
Authors:  Zhao DG;  Xu SJ;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
Adobe PDF(53Kb)  |  Favorite  |  View/Download：3210/1448  |  Submit date：2010/08/12
Vapor-phase Epitaxy  Phonon Deformation Potentials  Molecular-beam Epitaxy  Raman-scattering  Alpha-gan  Aln  Layers  Strain  Wurtzite  Films  
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
Authors:  Feng G;  Fu Y;  Xia JS;  Zhu JJ;  Zhang BS;  Shen XM;  Zhao DG;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Vapor-phase Epitaxy  Deposition  Layers  Films  
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:  Feng G;  Zheng XH;  Fu Y;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Etching  Metalorganic Vapor-phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Light-emitting-diodes  Vapor-phase Epitaxy  Films  Dislocations  Density  Growth  Layers  
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 225, 期号: 1, 页码: 45-49
Authors:  Fu Y;  Yang H;  Zhao DG;  Zheng XH;  Li SF;  Sun YP;  Feng ZH;  Wang YT;  Duan LH;  Fu Y,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Photoluminescence  Sem  Epitaxial Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Cubic Gan  Phase Epitaxy  Selective Growth  Laser-diodes  Layers  
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2000, 卷号: 29, 期号: 2, 页码: 177-182
Authors:  Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH;  Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100864,Peoples R China.
Adobe PDF(1465Kb)  |  Favorite  |  View/Download：815/193  |  Submit date：2010/08/12
Cubic Gan  Hexagonal Gan  Buffer Layer  Afm  Rheed  Cubic Gan  Films  Gaas  Dependence  Nitride  Layers