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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [6]
集成光电子学国家重点... [1]
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赵德刚 [7]
江德生 [2]
朱建军 [2]
王玉田 [2]
张书明 [2]
朱继红 [1]
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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 1, 页码: Art. No. 017307
Authors:
Wang LJ
;
Zhang SM
;
Zhu JH
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Jiang DS
;
Wang YT
;
Yang H
;
Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(699Kb)
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View/Download:1431/361
  |  
Submit date:2010/04/05
Gan
Light Emitting Diode
Surface Treatment
Leakage Current
Threading Dislocation Densities
Layers
Ni/au
Leds
Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films
期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 076104
Authors:
Wang LJ
;
Zhang SM
;
Wang YT
;
Jiang DS
;
Zhu JJ
;
Zhao DG
;
Liu ZS
;
Wang H
;
Shi YS
;
Liu SY
;
Yang H
;
Zhang SM Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: smzhang@red.semi.ac.cn
Adobe PDF(368Kb)
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View/Download:1618/542
  |  
Submit date:2010/03/08
Densities
Crystals
Layers
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 4, 页码: 677-679
Authors:
Zhao DG
;
Xu SJ
;
Xie MH
;
Tong SY
;
Yang H
;
Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
Adobe PDF(53Kb)
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View/Download:3275/1448
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Submit date:2010/08/12
Vapor-phase Epitaxy
Phonon Deformation Potentials
Molecular-beam Epitaxy
Raman-scattering
Alpha-gan
Aln
Layers
Strain
Wurtzite
Films
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
Authors:
Feng G
;
Fu Y
;
Xia JS
;
Zhu JJ
;
Zhang BS
;
Shen XM
;
Zhao DG
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(98Kb)
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View/Download:1087/406
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Submit date:2010/08/12
Vapor-phase Epitaxy
Deposition
Layers
Films
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
Authors:
Feng G
;
Zheng XH
;
Fu Y
;
Zhu JJ
;
Shen XM
;
Zhang BS
;
Zhao DG
;
Wang YT
;
Yang H
;
Liang JW
;
Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(120Kb)
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View/Download:1201/332
  |  
Submit date:2010/08/12
X-ray Diffraction
Etching
Metalorganic Vapor-phase Epitaxy
Nitrides
Semiconducting Iii-v Materials
Light-emitting-diodes
Vapor-phase Epitaxy
Films
Dislocations
Density
Growth
Layers
Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 225, 期号: 1, 页码: 45-49
Authors:
Fu Y
;
Yang H
;
Zhao DG
;
Zheng XH
;
Li SF
;
Sun YP
;
Feng ZH
;
Wang YT
;
Duan LH
;
Fu Y,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)
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View/Download:1289/437
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Submit date:2010/08/12
Photoluminescence
Sem
Epitaxial Lateral Overgrowth
Metalorganic Chemical Vapor Deposition
Cubic Gan
Phase Epitaxy
Selective Growth
Laser-diodes
Layers
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 2000, 卷号: 29, 期号: 2, 页码: 177-182
Authors:
Xu DP
;
Yang H
;
Li JB
;
Li SF
;
Wang YT
;
Zhao DG
;
Wu RH
;
Xu DP,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,Beijing 100864,Peoples R China.
Adobe PDF(1465Kb)
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View/Download:844/193
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Submit date:2010/08/12
Cubic Gan
Hexagonal Gan
Buffer Layer
Afm
Rheed
Cubic Gan
Films
Gaas
Dependence
Nitride
Layers