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Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Buffer Layer  Substrate  Diodes  Growth  
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
Authors:  Zhang BS;  Wu M;  Shen XM;  Chen J;  Zhu JJ;  Liu JP;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Metalorganic Chemical Vapor Deposition  Nitrides  Semiconductor Iii-v Materials  Molecular-beam Epitaxy  High-quality Gan  Chemical-vapor-deposition  Intermediate Layer  Alas  Aln  Surfaces  Silicon  Films  
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Shen XM;  Feng G;  Liu JP;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowths  Surface Morphology  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  Light-emitting-diodes  Sapphire Substrate  Nucleation Layers  Quality  Temperature  
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique 期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 2003, 卷号: 46, 期号: 4, 页码: 437-440
Authors:  Feng G;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Gan  X-ray Diffraction  Thickness  Sapphire  Growth  Films  
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
Authors:  Chen J;  Zhang SM;  Zhang BS;  Zhu JJ;  Feng G;  Shen XM;  Wang YT;  Yang H;  Zheng WC;  Chen J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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In Situ Laser Reflectometry  Lateral Overgrowth  Metalorganic Chemical Vapor Deposition  Gan  Chemical-vapor-deposition  High-quality Gan  Buffer Layer  Threading Dislocations  Temperature  Evolution  Surface  Movpe  
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27
Authors:  Shen XM;  Wang YT;  Zheng XH;  Zhang BS;  Chen J;  Feng G;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Buffer Layers  X-ray Diffraction  Metalorganic Chemical Vapor Deposition  Nitrides  Vapor-phase Epitaxy  Nucleation Layers  Cubic Gan  (001)Gaas Substrate  Strain Relaxation  Temperature  Deposition  Quality  Diodes  
Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13
Authors:  Shen XM;  Feng G;  Zhang BS;  Duan LH;  Wang YT;  Yang H;  Shen XM,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Scanning Electron Microscopy  X-ray Diffraction  Metalorganic Vapor Phase Epitaxy  Selective Area Growth  Gallium Nitride  Cubic Gan  Overgrown Gan  Deposition  Gaas(100)  
Metal-semiconductor-metal ultraviolet photodetector based on GaN 期刊论文
SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 2003, 卷号: 46, 期号: 2, 页码: 198-203
Authors:  Wang J;  Zhao DA;  Liu ZS;  Feng G;  Zhu JJ;  Shen XM;  Zhang BS;  Yang H;  Wang J,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Gan  Msm  Ultraviolet Photodetector  Responsivity  Low-noise  Detectors  Photodiodes  Si(111)  Gain  
High-resolution X-ray diffraction analysis of the Bragg peak integrated intensity in highly mismatched III-N epilayers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 354-358
Authors:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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X-ray Diffraction  Metalorganic Vapor Phase Epitaxy  Nitrides  Semiconducting Iii-v Materials  Buffer Layer  Gan  Growth  
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
Authors:  Feng G;  Fu Y;  Xia JS;  Zhu JJ;  Zhang BS;  Shen XM;  Zhao DG;  Yang H;  Liang JW;  Feng G,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,Beijing 100083,Peoples R China.
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Vapor-phase Epitaxy  Deposition  Layers  Films