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Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1528/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
Electronic structure and optical property of semiconductor nanocrystallites 会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Xia JB;  Chang K;  Li SS;  Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1107/297  |  提交时间：2010/11/15
Semiconductor Cluster  Self-assembled Quantum Dot  Diluted Magnetic Semiconductor  Electronic Structure  Resonant Tunneling  Quantum Dots  Exciton-states  Spheres  
Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1376/297  |  提交时间：2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
Exploration on enhancing innovation capability of functional information materials in China 会议论文
RARE METAL MATERIALS AND ENGINEERING, 30, XIAN, PEOPLES R CHINA, SEP 16-20, 2001
作者:  Wang ZG;  Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1892Kb)  |  收藏  |  浏览/下载：901/109  |  提交时间：2010/11/15
Information Technology  Semiconductor Micro-structural Materials  Superlattice And Quantum Well Materials  Quantum Wire And Quantum Dot Materials  
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots 会议论文
PHYSICA B-CONDENSED MATTER, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
作者:  Wang H;  Niu ZC;  Zhu HJ;  Wang ZM;  Jiang DS;  Feng SL;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1300/261  |  提交时间：2010/11/15
Quantum Dot  Growth Interruption  Quantum Dot Laser  
Photoluminescence characteristics of GaAs/AlGaAs quantum dot arrays fabricated by dry and dry-wet etching 会议论文
PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES, 3899, SINGAPORE, SINGAPORE, DEC 01-03, 1999
作者:  Wang XH;  Song AM;  Liu J;  Cheng WC;  Li GH;  Li CF;  Li YX;  Yu JZ;  Wang XH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：1299/278  |  提交时间：2010/10/29
Gaas/algaas  Quantum Dot Array  Etching Method  Photoluminescence  Wires  
Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures 会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:  Si JJ;  Yang QQ;  Wang HJ;  Wang QM;  Si JJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：1138/189  |  提交时间：2010/10/29
Si/sige  Quantum Dot  Electroluminescence  Photoluminescence  
New method for the growth of highly uniform quantum dots 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:  Pan D;  Zeng YP;  Kong MY;  Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：1040/178  |  提交时间：2010/11/15
Self-formed Quantum Dot  Stranski-krastanow Growth Mode  Superlattice  Molecular-beam Epitaxy  Ingaas  Gaas  Dislocations  Multilayers  Defects  Strain