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X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices 期刊论文
CHINESE PHYSICS LETTERS, 2001, 卷号: 18, 期号: 6, 页码: 810-812
Authors:  Wang H;  Xu SJ;  Li Q;  Feng SL;  Wang H,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Luminescence  
Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate 期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 8, 页码: 612-614
Authors:  Chen Y;  Li GH;  Han HX;  Wang ZP;  Xu DP;  Yang H;  Chen Y,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Photoluminescence  
The influence of growth interruption on quantum dot laser 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 卷号: 19, 期号: 5, 页码: 347-350
Authors:  Wang H;  Wang HL;  Wang XD;  Niu ZC;  Feng SL;  Wang H,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Self-organized Inas Quantum Dots  Quantum Dots Laser  Growth Interruption  Band-filling  
The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 卷号: 19, 期号: 3, 页码: 191-193
Authors:  Wang HL;  Zhu HJ;  Ning D;  Wang H;  Wang XD;  Guo ZS;  Feng SL;  Ning D,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Atomic Hydrogen-assisted Molecular Beam Epitaxy  Deep Level Transient Spectroscopy  Deep Level Defects  Dislocation Density  Irradiation  
Formation of InAs quantum dots on low-temperature GaAs epi-layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 218, 期号: 2-4, 页码: 209-213
Authors:  Wang XD;  Niu ZC;  Wang H;  Feng SL;  Wang XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Quantum Dot  Low-temperature Gaas  As Precipitates  Annealing  Tem  Pl  Molecular-beam Epitaxy  Islands  Growth  Surfaces  
Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 卷号: 19, 期号: 3, 页码: 177-180
Authors:  Wang XD;  Wang H;  Wang HL;  Niu ZC;  Feng SL;  Wang XD,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China.
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Inas Quantum Dots  Low Temperature Gaas  As Precipitates  Molecular-beam Epitaxy  Dependence  
Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots 期刊论文
PHYSICAL REVIEW B, 2000, 卷号: 61, 期号: 8, 页码: 5530-5534
Authors:  Wang HL;  Yang FH;  Feng SL;  Zhu HJ;  Ning D;  Wang H;  Wang XD;  Feng SL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 期刊论文
COMPOUND SEMICONDUCTORS 1999, 2000, 期号: 166, 页码: 251-256
Authors:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
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Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures 会议论文
COMPOUND SEMICONDUCTORS 1999, (166), BERLIN, GERMANY, AUG 22-26, 1999
Authors:  Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Electronic-structure  Carrier Relaxation  Energy-levels  Spectroscopy  
Methods to tune the electronic states of self-organized InAs/GaAs quantum dots 会议论文
PHYSICA B-CONDENSED MATTER, 279 (1-3), HONG KONG, HONG KONG, JUN 21-25, 1999
Authors:  Wang H;  Niu ZC;  Zhu HJ;  Wang ZM;  Jiang DS;  Feng SL;  Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
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Quantum Dot  Growth Interruption  Quantum Dot Laser