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Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 9, 页码: Art.No.094302
Authors:  Bian LF;  Zhang CG;  Chen WD;  Hsu CC;  Qu YH;  Jiang DS;  Bian, LF, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. E-mail: guobian@semi.ac.cn
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Room-temperature  Silicon  Semiconductors  Dislocations  Spectra  
Photon localization and lasing in disordered GaNxAs1-x optical superlattices 期刊论文
PHYSICAL REVIEW B, 2006, 卷号: 73, 期号: 19, 页码: Art.No.195112
Authors:  Sun BQ;  Jiang DS;  Sun, BQ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 911, Beijing 100083, Peoples R China. E-mail: bqsun@red.semi.ac.cn
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Random Laser  Scattering  Media  Light  Absorption  Cavities  Gain  
Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073517
Authors:  Lu SL;  Jiang DS;  Dai JM;  Yang CL;  He HT;  Ge WK;  Wang JN;  Chang K;  Zhang JY;  Shen DZ;  Wang, JN, Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Hong Kong, Peoples R China. E-mail: phjwang@ust.hk
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Quantum Dots  Exchange Interaction  Magnetic-fields  Zn1-xmnxse  Znmnse  Excitons  
Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 288, 期号: 1, 页码: 40529
Authors:  Jiang DS;  Qu YH;  Ni HQ;  Wu DH;  Xu YQ;  Niu ZC;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: dsjiang@red.semi.ac.cn
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Molecular Beam Epitaxy  Quantum Wells  Semiconducting Iii-v Materials  Mu-m  Lasers  Temperature  Surfactant  Nm