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Solid-state qubit measurement with single electron transistors 会议论文
SOLID-STATE QUANTUM COMPUTING, Taipei, TAIWAN, JUN 23-27, 2008
Authors:  Jiao, HJ;  Li, F;  Wang, SK;  Li, XQ;  Jiao, HJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
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Solid-state Qubit  Single-electron-transistor  Quantum Measurement  Number-resolved Master Equation  
Self-assembled GaAs quantum rings by MBE droplet epitaxy 会议论文
Nanoscience and Technology丛书标题: SOLID STATE PHENOMENA, Beijing, PEOPLES R CHINA, JUN 09-11, 2005
Authors:  Huang, SS (Huang, Shesong);  Niu, ZC (Niu, Zhichuan);  Xia, JB (Xia, Jianbai);  Huang, SS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
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Quantum Single Rings  Concentric Quantum Double Rings  Coupled Concentric Quantum Double Ring  Droplet Epitaxy  
Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Miao, ZH (Miao, Zhenhua);  Gong, Z (Gong, Zheng);  Fang, ZD (Fang, Zhidan);  Niu, ZC (Niu, Zhichuan);  Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
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Atomic Hydrogen  Molecular Beam Epitaxy  Step Arrays  Molecular-beam Epitaxy  Atomic-hydrogen  Vicinal Surface  Quantum Dots  Growth  Temperature  Irradiation  Mechanism  Mbe  
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
High efficiency RFID UHF power converter 会议论文
TENCON 2006 - 2006 IEEE REGION 10 CONFERENCE丛书标题: TENCON-IEEE Region 10 Conference Proceedings, Hong Kong, PEOPLES R CHINA, NOV 14-17, 2006
Authors:  Zhou, SH (Zhou, Shenghua);  Yang, ZC (Yang, Zhichao);  Wu, NJ (Wu, Nanjian);  Zhou, SH, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
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Surface morphology evolution of strained InAs/GaAs(331)a films 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Gong, M (Gong, Meng);  Fang, ZD (Fang, Zhidan);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Gong, M, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
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Surface Morphology Evolution  Inas Nanostructures  Island-pit Pairs  Molecular-beam Epitaxy  Quantum Dots  Cooperative Nucleation  Heteroepitaxy  Transition  Islands  Growth  
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Fang, ZD (Fang, Zhidan);  Gong, M (Gong, Meng);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Quantum Dots  Photoluminescence  Combination Layer  1.3 Mu-m  Lasers  Inalas  
An adaptive frequency synthesizer architecture reducing reference sidebands 会议论文
2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS丛书标题: IEEE INTERNATIONAL SYMP ON CIRCUITS AND SYSTEMS, Kos Isl, GREECE, MAY 21-24, 2006
Authors:  Wang, HY (Wang, Haiyong);  Shou, GL (Shou, Guoliang);  Wu, NJ (Wu, Nanjian);  Wang, HY, Beijing LHWT Microelectr Inc, Beijing, Peoples R China.
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Tuning System  
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
Authors:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  He, ZH;  Sun, Z;  Han, Q;  Wu, RG;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China.
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Improved Luminescence Efficiency  Temperature  Photoluminescence  Nitrogen  Origin  Diodes  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
Authors:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation