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Ti Schottky barrier diodes on n-type 6H-SiC 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Liu ZL;  Wang SR;  Yu F;  Zhang YG;  Zhao H;  Liu ZL Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(214Kb)  |  收藏  |  浏览/下载：1537/581  |  提交时间：2010/10/29
Semiconductor  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1623/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering 会议论文
CHINESE PHYSICS, 10, BEIJING, PEOPLES R CHINA, OCT 30-NOV 02, 2000
作者:  Liu JW;  Xie FQ;  Zhong DY;  Wang EG;  Liu WX;  Li SF;  Yang H;  Liu JW Chinese Acad Sci Inst Phys State Key Lab Surface Phys POB 603 Beijing 100080 Peoples R China.
收藏  |  浏览/下载：883/0  |  提交时间：2010/11/15
Luminescence  Sic  Nanocrystalline Film  Rf Sputtering  Raman-scattering  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1257/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk