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A SIMPLE METHOD FOR EFFECTIVELY RESTRAIN ELECTROCHEMICAL CORROSION OF POLYCRYSTALLINE SILICON BY HF-BASED SOLUTIONS 会议论文
PROCEEDINGS: IEEE MICRO ELECTRO MECHANICAL SYSTEMS 页: 205-208, Cancun, MEXICO, 2011
作者:  Xie J (Xie J.);  Liu YF (Liu Y. F.);  Zhang ML (Zhang M. L.);  Yang JL (Yang J. L.);  Yang FH (Yang F. H.)
Adobe PDF(2599Kb)  |  收藏  |  浏览/下载：1790/358  |  提交时间：2011/12/13
Design and Realization of Index-Coupled DFB Laser with Sampled Grating 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang H;  Zhu HL;  Chen XF;  Li JS;  Wang LS;  Zhang W;  Wang W;  Wang, H, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1501/372  |  提交时间：2010/03/09
Tuning Range  
A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics 会议论文
2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), Singapore, SINGAPORE, DEC 08-11, 2008
作者:  Wang, LS;  Zhao, LJ;  Pan, JQ;  Zhang, W;  Wang, H;  Liang, S;  Zhu, HL;  Wang, W;  Wang, LS, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：1394/343  |  提交时间：2010/03/09
P-i-n/hbt  Wave-guide  Inp/ingaas  Frequency  Hbt  
An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang H;  Zhu HL;  Cheng YB;  Chen D;  Zhang W;  Wang LS;  Zhang YX;  Sun Y;  Wang W;  Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(328Kb)  |  收藏  |  浏览/下载：1232/276  |  提交时间：2010/03/09
A 5GHz low power WLAN transceiver SiGe RFIC for personal communication terminal applications 会议论文
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, JAN 10-12, 2007
作者:  Yan, J (Yan, Jun);  Xu, QM (Xu, Qiming);  Zhang, XL (Zhang, Xuelian);  Hu, XQ (Hu, Xueqing);  Xu, H (Xu, Hua);  Shi, Y (Shi, Yin);  Dai, FF (Dai, Fa Foster);  Yan, J, Chinese Acad Sci, Inst Semicond, SemiRF Lab, ISCAS, Beijing 100083, Peoples R China.
Adobe PDF(82Kb)  |  收藏  |  浏览/下载：1523/251  |  提交时间：2010/03/29
Personal Communication Terminal  Sige Rfic  Wlan 802.11a Transceiver  
Silicon thin films prepared in the transition region and their use in solar cells 会议论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, Bangkok, THAILAND, JAN 27-FEB 01, 2004
作者:  Zhang S;  Liao X;  Raniero L;  Fortunato E;  Xu Y;  Kong G;  Aguas H;  Ferreira I;  Martins R;  Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1603/301  |  提交时间：2010/03/29
Silicon  
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
Ultrafast Phenomena in Semiconductors and Nanostructure Materials X丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), San Jose, CA, JAN 23-25, 2006
作者:  Sun, Z (Sun, Z.);  Xu, ZY (Xu, Z. Y.);  Yang, XD (Yang, X. D.);  Sun, BQ (Sun, B. Q.);  Ji, Y (Ji, Y.);  Zhang, SY (Zhang, S. Y.);  Ni, HQ (Ni, H. Q.);  Niu, ZC (Niu, Z. C.);  Sun, Z, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1681/401  |  提交时间：2010/03/29
Gainnas/gaas Quantum Wells  Optical Properties  Nonradiative Recombination Effect  Time-resolved Photoluminescence  Pl Decay Dynamics  Pl Thermal Quenching  Molecular-beam Epitaxy  Gaasn Alloys  Excitation  
Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, NARA, JAPAN, MAY 25-30, 2003
作者:  Feng G;  Shen XM;  Zhu JJ;  Zhang BS;  Yang H;  Liang JW;  Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(92Kb)  |  收藏  |  浏览/下载：1245/308  |  提交时间：2010/10/29
Buffer Layer  Substrate  Diodes  Growth  
MOCVD growth of high quality crack-free GaN on Si(III) substrates 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Zhang BS;  Zhu JJ;  Wang YT;  Yang H;  Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1373/302  |  提交时间：2010/10/29
Vapor-phase Epitaxy  Layers  Aln  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  收藏  |  浏览/下载：1270/260  |  提交时间：2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction