An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser

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	An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser
	Wang H; Zhu HL; Cheng YB; Chen D; Zhang W; Wang LS; Zhang YX; Sun Y; Wang W; Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	Asia Optical Fiber Communication and Optoelectronic Exposition and Conference
会议录名称	AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE
页码	CONFERENCE PROCEEDINGS: 490-492
会议日期	OCT 17-19, 2007
会议地点	Shanghai, PEOPLES R CHINA
出版地	DI WANG COMMERCIAL CENTRE, 6503, SHUN HING SQUARE, 65TH FLR, 5002 SHEN NAN RD E, SHENZHEN, GUANGDONG 518008, PEOPLES R CHINA
出版者	AOE
ISBN	978-0-9789217-3-6
部门归属	[wang, huan] cas, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	An improved selective area growth (SAG) method is proposed to better the fabrication and performance of the Electroabsorption modulated laser The typical threshold current of the EML is 18mA, and the output power is 5.6mW at EAM facet.
学科领域	光电子学
主办者	Opt Soc Amer.; IEEE Lasers & ElectroOpt Soc.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8320
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang H,Zhu HL,Cheng YB,et al. An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser[C]. DI WANG COMMERCIAL CENTRE, 6503, SHUN HING SQUARE, 65TH FLR, 5002 SHEN NAN RD E, SHENZHEN, GUANGDONG 518008, PEOPLES R CHINA:AOE,2008:CONFERENCE PROCEEDINGS: 490-492.

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