MOCVD growth of high quality crack-free GaN on Si(III) substrates

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	MOCVD growth of high quality crack-free GaN on Si(III) substrates
	Zhang BS; Zhu JJ; Wang YT; Yang H; Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2003
会议名称	6th Chinese Optoelectronics Symposium
会议录名称	PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM
页码	36-39
会议日期	SEP 12-14, 2003
会议地点	KOWLOON, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-7887-3
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.
关键词	Vapor-phase Epitaxy Layers Aln
学科领域	光电子学
主办者	Hong Kong Baptist Univ.; Chinese Univ Hong Kong.; City Univ Hong Kong.; Hong Kong Polytech Univ.; Univ Hong Kong.; IEEE LEOS Hong Kong Chapter.; AIXTRON AG.; Kopin Corp.; Oxford Instruments Teltec Semiconductor Pacific Ltd.; Hong Kong Sci & Technol Pk Corp.; Soc Informat Display Hong Kong Chapter.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13569
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhang BS,Zhu JJ,Wang YT,et al. MOCVD growth of high quality crack-free GaN on Si(III) substrates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2003:36-39.

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