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MOCVD growth of high quality crack-free GaN on Si(III) substrates | |
Zhang BS; Zhu JJ; Wang YT; Yang H; Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. | |
2003 | |
会议名称 | 6th Chinese Optoelectronics Symposium |
会议录名称 | PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM |
页码 | 36-39 |
会议日期 | SEP 12-14, 2003 |
会议地点 | KOWLOON, PEOPLES R CHINA |
出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
出版者 | IEEE |
ISBN | 0-7803-7887-3 |
部门归属 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
摘要 | High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported. |
关键词 | Vapor-phase Epitaxy Layers Aln |
学科领域 | 光电子学 |
主办者 | Hong Kong Baptist Univ.; Chinese Univ Hong Kong.; City Univ Hong Kong.; Hong Kong Polytech Univ.; Univ Hong Kong.; IEEE LEOS Hong Kong Chapter.; AIXTRON AG.; Kopin Corp.; Oxford Instruments Teltec Semiconductor Pacific Ltd.; Hong Kong Sci & Technol Pk Corp.; Soc Informat Display Hong Kong Chapter. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/13569 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang BS,Zhu JJ,Wang YT,et al. MOCVD growth of high quality crack-free GaN on Si(III) substrates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2003:36-39. |
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