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高质量稀磁半导体(Ga, Mn)Sb单晶薄膜分子束外延生长 期刊论文
物理学报, 2015, 卷号: 64, 期号: 7, 页码: 077501
Authors:  祝梦遥;  鲁军;  马佳淋;  李利霞;  王海龙;  潘东;  赵建华
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氮化镓基多波段探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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利用光辅助氧化湿法刻蚀Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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一种生长纳米折叠结构有源区外延片的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2009-12-02, 2010-08-12
Inventors:  朱建军
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Abnormal photoabsorption in high resistance GaN epilayer 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  Liu WB (Liu Wen-Bao);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wbliu@semi.ac.cn
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Gan  Exciton  Photovoltaic Spectroscopy  Msm  Photoresponsivity  
空间调制原子层化学气相淀积外延生长的装置及方法 专利
专利类型: 发明, 申请日期: 2009-06-03, 公开日期: 3996
Inventors:  朱建军;  杨 辉;  王怀兵 
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Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  Zhang S (Zhang Shuang);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Duan LH (Duan Li-Hong);  Liu WB (Liu Wen-Bao);  Jiang DS (Jiang De-Sheng);  Yang H (Yang Hui);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Gan  
提高氮化镓材料载流子迁移率的方法 专利
专利类型: 发明, 申请日期: 2008-06-04, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵德刚;  朱建军;  杨辉;  梁骏吾
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一种制作氮化镓基激光器管芯的方法 专利
专利类型: 发明, 申请日期: 2008-03-26, 公开日期: 2009-06-04, 2009-06-11
Inventors:  张书明;  种明;  朱建军;  杨辉
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蓝紫光InGaN多量子阱激光器 期刊论文
中国科学. E辑, 技术科学, 2007, 卷号: 37, 期号: 3, 页码: 356-359
Authors:  李德尧;  张书明;  王建峰;  陈俊;  陈良惠;  种明;  朱建军;  赵德刚;  刘宗顺;  杨辉;  梁骏吾
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