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Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Yang CB;  Zhang ML
Adobe PDF(712Kb)  |  Favorite  |  View/Download:1204/365  |  Submit date:2011/07/07
Gan  Ferromagnetic  Implantation  Annealing  
Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
Authors:  Zhang ML;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Tang J;  Feng C;  Jiang LJ;  Hu GX;  Ran JX;  Wang MG;  Zhang ML Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: mlzhang@semi.ac.cn
Adobe PDF(1085Kb)  |  Favorite  |  View/Download:1080/347  |  Submit date:2010/03/08
Algan/gan Heterostructure  Superlattices (Sls)  Root Mean Square Roughness (Rms)  Sheet Resistance