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Electronic structure and optical property of semiconductor nanocrystallites 会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Xia JB;  Chang K;  Li SS;  Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1098/297  |  提交时间：2010/11/15
Semiconductor Cluster  Self-assembled Quantum Dot  Diluted Magnetic Semiconductor  Electronic Structure  Resonant Tunneling  Quantum Dots  Exciton-states  Spheres  
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(519Kb)  |  收藏  |  浏览/下载：1255/244  |  提交时间：2010/03/29
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1649/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation  
Pressure behavior of Te isoelectronic centers in S-rich ZnS1-xTex alloy 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2), GUILDFORD, ENGLAND, AUG 05-08, 2002
作者:  Li GH;  Fang ZL;  Su FH;  Ma BS;  Ding K;  Han HX;  Sou IK;  Ge WK;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(179Kb)  |  收藏  |  浏览/下载：1401/261  |  提交时间：2010/11/15
Optical-absorption  Zns-te  Transition  Edge  
Study on optical band gap of boron-doped nc-Si : H film 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:  Wei WS;  Wang TM;  Zhang CX;  Li GH;  Han HX;  Ding K;  Wei WS Beijing Univ Aeronaut & Astronaut Sch Sci Ctr Mat Phys & Chem Beijing 100083 Peoples R China.
Adobe PDF(860Kb)  |  收藏  |  浏览/下载：1045/213  |  提交时间：2010/11/15
Amorphous-silicon  
Hybrid CMOS/VCSEL optoelectronic modules 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Chen HD;  Mao LH;  Tiang J;  Liang K;  Du Y;  Huang YZ;  Wu RG;  Feng J;  Ke XM;  Liu HY;  Wang ZG;  Li SR;  Li ZY;  Guo WL;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(212Kb)  |  收藏  |  浏览/下载：1599/313  |  提交时间：2010/10/29
Vcsel  Cmos  Mcm  Optoelectronic Integration  Smart Pixels  Optical Interconnects  Smart  
Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots 会议论文
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 223 (1), SAPPORO, JAPAN, SEP 24-28, 2000
作者:  Li GH;  Chen Y;  Fung ZL;  Ding K;  Han HX;  Zhou W;  Wang ZG;  Li GH Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(165Kb)  |  收藏  |  浏览/下载：1247/322  |  提交时间：2010/11/15
Hydrostatic-pressure  Photoluminescence  Gaas  Luminescence  Growth  Insb  Gasb  
VCSEL based optoelectronic multiple chip modules 会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:  Chen HD;  Liang K;  Du Y;  Huang YZ;  Tiang J;  Ma XY;  Wu RH;  Li SY;  Guo WL;  Xu GJ;  Wang Y;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(129Kb)  |  收藏  |  浏览/下载：1374/289  |  提交时间：2010/10/29
Vcsel  Photodetector  Cmos  Mcm  Optoelectronic Integration  Optical Interconnects  Surface-emitting Lasers  Mqw Modulators  Integration  Circuits  Vlsi  
Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels 会议论文
IEE PROCEEDINGS-OPTOELECTRONICS, 147 (1), CARDIFF, WALES, 1999
作者:  Chen HD;  Liang K;  Zeng QM;  Li XJ;  Chen ZB;  Du Y;  Wu RH;  Chen HD Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(545Kb)  |  收藏  |  浏览/下载：1313/326  |  提交时间：2010/11/15
Mqw Modulators  Effect Device  Progress  Circuits  Cmos  
Experimental study on tunable external cavity photodetectors 会议论文
OPTICAL MATERIALS, 14 (3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Ren XM;  Liu K;  Huang YQ;  Liu LY;  Li JX;  Guo W;  Liao QW;  Ma XY;  Kang XJ;  Campbell JC;  Ren XM Beijing Univ Posts & Telecommun Beijing 100876 Peoples R China.
Adobe PDF(94Kb)  |  收藏  |  浏览/下载：1384/392  |  提交时间：2010/11/15
External Cavity Photodetector  Tunable Photodetector  Optoelectronic Device  Wavelength