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Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 7, 页码: Art. No. 073111
Authors:  Ding Y (Ding Y.);  Fan WJ (Fan W. J.);  Ma BS (Ma B. S.);  Xu DW (Xu D. W.);  Yoon SF (Yoon S. F.);  Liang S (Liang S.);  Zhao LJ (Zhao L. J.);  Wasiak M (Wasiak M.);  Czyszanowski T (Czyszanowski T.);  Nakwaski W (Nakwaski W.);  Ding, Y, NanyangTechnolUniv, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: yding@ntu.edu.sg
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Vapor-phase Epitaxy  Photovoltage Spectroscopy  Photoluminescence  Modes  
High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns 期刊论文
OPTIK, 2008, 卷号: 119, 期号: 14, 页码: 657-660
Authors:  Peng, JY;  Tan, HM;  Wang, YG;  Ma, XY;  Miao, JG;  Wang, BS;  Qian, LS;  Wang, YG, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: chinawygxjw@163.com
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Microchip Laser  Q-switched  High Repetition Rate  Lt In0.25ga0.75as  Gaas  
Q-switched and mode-locked diode-pumped Nd : YVO4 laser with an intracavity composite semiconductor saturable absorber 期刊论文
OPTICS AND LASER TECHNOLOGY, 2008, 卷号: 40, 期号: 2, 页码: 243-246
Authors:  Peng JY (Peng Ji-Ying);  Wang BS (Wang Bao-Shan);  Wang YG (Wang Yong-Gang);  Miao JG (Miao Jie-Guang);  Tan HM (Tan Hui-Ming);  Qian LS (Qian Long-Sheng);  Ma XY (Ma Xiao-Yu);  Peng, JY, Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130332, Peoples R China.
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Q-switched Mode-locking  
Passive stabilization of a passively mode-locked Nd : GdVO4 laser by inverse saturable absorption 期刊论文
OPTICS COMMUNICATIONS, 2008, 卷号: 281, 期号: 1, 页码: 141-145
Authors:  Peng, JY;  Miao, JG;  Wang, YG;  Wang, BS;  Tan, HM;  Qian, LS;  Ma, XY;  Peng, JY, Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China. 电子邮箱地址: jiyingpengl11@163.com
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Passive Stabilization  Mode Locked Laser  Sesaoc  Bibo Crystal  
High-average-power and high-conversion-efficiency continuous wave mode-locked Nd : YVO4 laser with a semiconductor absorber mirror 期刊论文
OPTICS AND LASER TECHNOLOGY, 2007, 卷号: 39, 期号: 6, 页码: 1135-1139
Authors:  Peng, JY (Peng, Ji-ying);  Miao, JG (Miao, Jie-guang);  Wang, YG (Wang, Yong-gang);  Wang, BS (Wang, Bao-shan);  Tan, HM (Tan, Hui-ming);  Qian, LS (Qian, Long-sheng);  Ma, XY (Ma, Xiao-yu);  Peng, JY, Chinese Acad Sci, Chungchun Inst Opt Fine Mech & Phys, Changchun 130022, Peoples R China. 电子邮箱地址: jiyingpeng111@163.com
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High-average-power  
High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror 期刊论文
LASER PHYSICS, 2007, 卷号: 17, 期号: 8, 页码: 1033-1036
Authors:  Peng, JY (Peng, J. Y.);  Wang, BS (Wang, B. S.);  Wang, YG (Wang, Y. G.);  Miao, JG (Miao, J. G.);  Hao, EJ (Hao, E. J.);  Tan, HM (Tan, H. M.);  Qian, LS (Qian, L. S.);  Ma, XY (Ma, X. Y.);  Peng, JY, Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130022, Peoples R China. 电子邮箱地址: jiyingpeng111@163.com
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Saturable-absorber  
Lifetime study of N impurity states in GaAs1-xNx (x=0.1%) under hydrostatic pressure 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 20, 页码: Art.No.201917
Authors:  Wang WJ;  Yang XD;  Ma BS;  Sun Z;  Su FH;  Ding K;  Xu ZY;  Li GH;  Zhang Y;  Mascarenhas A;  Xin HP;  Tu CW;  Wang, WJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: wwjgr@mail.semi.ac.cn
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Pair Luminescence  Gap-n  Gaas  Excitons  Alloy  
Study on Raman spectra of GaMnAs 期刊论文
JOURNAL OF INFRARED AND MILLIMETER WAVES, 2006, 卷号: 25, 期号: 3, 页码: 207-212
Authors:  Ma BS;  Wang WJ;  Su FH;  Den JJ;  Jiang CP;  Liu HL;  Ding K;  Zhao JH;  Li GH;  Ma, BS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
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Gamnas  Raman Spectrum  Coupled Plamon-lo-phonon Mode  Hole Density  Gaas  Mocvd  (Ga  Films  Mn)As  Gan  
Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber 期刊论文
LASER PHYSICS, 2006, 卷号: 16, 期号: 12, 页码: 1601-1604
Authors:  Peng, JY (Peng, J. Y.);  Tan, HM (Tan, H. M.);  Wang, YG (Wang, Y. G.);  Wang, BS (Wang, B. S.);  Miao, JG (Miao, J. G.);  Qian, LS (Qian, L. S.);  Ma, XY (Ma, X. Y.);  Peng, JY, Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China. 电子邮箱地址: jiyingpeng111@163.com
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Saturable Absorber  
Luminescence temperature and pressure studies of Zn2SiO4 phosphors doped with Mn2+ and Eu3+ ions 期刊论文
JOURNAL OF LUMINESCENCE, 2006, 卷号: 116, 期号: 1-2, 页码: 117-126
Authors:  Su FH;  Ma BS;  Ding K;  Li GH;  Wang SP;  Chen W;  Joly AG;  McCready DE;  Su, FH, Chinese Acad Sci, Inst Semicond, State Key lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: sufuhai@hotmail.com;  ghli@red.semi.ac.cn;  wchen@nomadics.com
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Zn2sio4