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Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Authors:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Ctr Mat Sci,Inst Semicond,Beijing 10083,Peoples R China.
Adobe PDF(96Kb)  |  Favorite  |  View/Download:1164/300  |  Submit date:2010/08/12
Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
Authors:  Liu JP;  Huang DD;  Li JP;  Lin YX;  Sun DZ;  Kong MY;  Huang DD,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(131Kb)  |  Favorite  |  View/Download:795/242  |  Submit date:2010/08/12
N-type Doping  P-type Doping  Si/sige  Hbt  Gsmbe  Si  
The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 457-460
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(107Kb)  |  Favorite  |  View/Download:1086/308  |  Submit date:2010/08/12
Gsmbe  Sige Alloy  Doping  Sims  Hbt  Current Gain  Si  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
Authors:  Gao F;  Huang DD;  Li JP;  Lin YX;  Kong MY;  Sun DZ;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(113Kb)  |  Favorite  |  View/Download:873/267  |  Submit date:2010/08/12
Si Growth Rate  p Doping  Ph3 Flow Rate  p Segregation  Gsmbe  Chemical-vapor-deposition  Si1-xgex  Phosphorus  Si2h6  Disilane  Si(100)  Mbe