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The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Yang, H;  Chen, Y;  Wang, LB;  Yi, XY;  Fan, JM;  Liu, ZQ;  Yang, FH;  Wang, LC;  Wang, GH;  Zeng, YP;  Li, JM;  Yang, H, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：7165/2096  |  提交时间：2010/03/09
Gan-based Led  Grinding  Ray Tracing  
An Improved Selective Area Growth Method in Fabrication of Electroabsorption Modulated Laser 会议论文
AOE 2007 ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, Shanghai, PEOPLES R CHINA, OCT 17-19, 2007
作者:  Wang H;  Zhu HL;  Cheng YB;  Chen D;  Zhang W;  Wang LS;  Zhang YX;  Sun Y;  Wang W;  Wang, H, CAS, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(328Kb)  |  收藏  |  浏览/下载：1235/276  |  提交时间：2010/03/09
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1238/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk