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Solid-state qubit measurement with single electron transistors 会议论文
SOLID-STATE QUANTUM COMPUTING, Taipei, TAIWAN, JUN 23-27, 2008
作者:  Jiao, HJ;  Li, F;  Wang, SK;  Li, XQ;  Jiao, HJ, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(714Kb)  |  收藏  |  浏览/下载：1763/418  |  提交时间：2010/03/09
Solid-state Qubit  Single-electron-transistor  Quantum Measurement  Number-resolved Master Equation  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1278/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density