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GaN-based violet lasers grown on sapphire with a novel facet fabrication method 会议论文
, 中国深圳, 2015
作者:  Yingdong Tian;  Yun Zhang;  Jianchang Yan;  Xiang Chen;  Yanan Guo;  Xuecheng Wei;  Junxi Wang;  Jinmin Li
Adobe PDF(336Kb)  |  收藏  |  浏览/下载：965/5  |  提交时间：2016/06/02
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111) 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:  Wang, XY (Wang, Xiaoyan);  Wang, XL (Wang, Xiaoliang);  Wang, BZ (Wang, Baozhu);  Xiao, HL (Xiao, Hongling);  Liu, HX (Liu, Hongxin);  Wang, JX (Wang, Junxi);  Zeng, YP (Zeng, Yiping);  Li, JM (Li, Jinmin);  Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)  |  收藏  |  浏览/下载：1585/341  |  提交时间：2010/03/29
Buffer Layer  Stress  Photodiodes  Reduction  Detectors  Sapphire  Epitaxy  Growth  
1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector 会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 08-11, 2004
作者:  Li CB;  Cheng BW;  Mao RW;  Zuo YH;  Yu JZ;  Wang QM;  Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1602/292  |  提交时间：2010/03/29
Wave-guide Photodetector  
Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser 会议论文
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, MAY 31-JUN 02, 2004
作者:  Xu QY;  Chen SW;  Xu, QY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(267Kb)  |  收藏  |  浏览/下载：1387/294  |  提交时间：2010/03/29
Fiber Grating  
Design of high brightness cubic-GaN LEDs grown on GaAs substrate 会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:  Sun YP;  Shen XM;  Zhang ZH;  Zhao DG;  Feng ZH;  Fu Y;  Zhang SN;  Yang H;  Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)  |  收藏  |  浏览/下载：1271/260  |  提交时间：2010/11/15
Wafer Bunding  Cubic Gan  Light-emitting-diodes  Field-effect Transistor  Single-crystal Gan  Microwave Performance  Mirror  Junction  
Stress analysis of silica-based arrayed waveguide grating by a finite element method 会议论文
MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING, 4918, SHANGHAI, PEOPLES R CHINA, OCT 14-18, 2002
作者:  Deng XQ;  Yang QQ;  Wang HJ;  Hu XW;  Wang QM;  Deng XQ Chinese Acad Sci Inst Semicond R&D Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(256Kb)  |  收藏  |  浏览/下载：1228/269  |  提交时间：2010/10/29
Finite Element Method  Stress  Silica Optical Waveguide On silicOn  Birefringence  Optical Wave-guides  Difference Method  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1239/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors 会议论文
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, LAS VEGAS, NV, MAY 21-24, 2000
作者:  Li C;  Yang QQ;  Ou HY;  Wang QM;  Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(305Kb)  |  收藏  |  浏览/下载：1411/439  |  提交时间：2010/10/29
Mirrors  
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:  Zhang JP;  Sun DZ;  Li XB;  Wang XL;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)  |  收藏  |  浏览/下载：1316/307  |  提交时间：2010/11/15
Stress  Growth  
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Wang GH;  Ma XY;  Zhang YF;  Peng HI;  Wang ST;  Li YZ;  Chen LH;  Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)  |  收藏  |  浏览/下载：1354/352  |  提交时间：2010/10/29
Led  Coupled Distributed Bragg Reflector  Mocvd  Algainp