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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
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浏览/下载:1675/615
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提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(925Kb)
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浏览/下载:1371/293
  |  
提交时间:2010/03/29
Chemical-vapor-deposition
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
作者:
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Gao, X, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(1172Kb)
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浏览/下载:1152/196
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提交时间:2010/03/29
Si(111)
Aln
Nano-layer structure of silicon-on-insulator materials
会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:
Wang X
;
Chen M
;
Chen J
;
Dong YN
;
Liu XH
;
He P
;
Tian LL
;
Liu ZL
;
Chen J Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol Ion Beam Lab 865 Changning Rd Shanghai 200050 Peoples R China.
Adobe PDF(1181Kb)
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浏览/下载:1188/242
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提交时间:2010/11/15
Soi
Nanostructure
Microelectronic Materials
Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
会议论文
FERROELECTRICS, 271, MADRID, SPAIN, SEP 03-07, 2001
作者:
Wang H
;
Shang SX
;
Yao WF
;
Hou Y
;
Xu XH
;
Wang D
;
Wang M
;
Yu JZ
;
Wang H Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China.
Adobe PDF(1640Kb)
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浏览/下载:1034/178
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提交时间:2010/11/15
Bi2ti2o7
Thin Film
Mocvd
(111) Orientation
Chemical-vapor-deposition
Crystal Thin-films
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:
Jiang DS
;
Liang XG
;
Sun BQ
;
Bian L
;
Li LH
;
Pan Z
;
Wu RG
;
Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)
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收藏
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浏览/下载:1353/283
  |  
提交时间:2010/10/29
Luminescence
Localization
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
会议论文
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000
作者:
Lu LW
;
Zhang YH
;
Xu ZT
;
Xu ZY
;
Wang ZG
;
Wang J
;
Ge WK
;
Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Adobe PDF(245Kb)
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  |  
浏览/下载:1257/368
  |  
提交时间:2010/11/15
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
会议论文
THIN SOLID FILMS, 368 (2), SHANGHAI, PEOPLES R CHINA, MAY 10-13, 1999
作者:
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
;
Sun XL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol Beijing 100083 Peoples R China.
Adobe PDF(206Kb)
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收藏
  |  
浏览/下载:1480/311
  |  
提交时间:2010/11/15
Metalorganic Chemical Vapor Deposition
Cubic Gan
Hexagonal Phase Content
4-circle X-ray Double Crystal Diffraction
Molecular-beam Epitaxy
Gallium Nitride
Thin-films
Silicon
Gaas
Design and fabrication of GaAs OMIST photodetector
会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:
Kang XJ
;
Lin SM
;
Liao QW
;
Gao JH
;
Liu SA
;
Cheng P
;
Wang HJ
;
Zhang CH
;
Wang QM
;
Kang XJ Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(138Kb)
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浏览/下载:1629/479
  |  
提交时间:2010/10/29
Photodetector
Oxidation
Materials Growth
Growth of Fe doped semi-insulating InP by LP-MOCVD
会议论文
INTEGRATED OPTOELECTRONICS II, 3551, BEIJING, PEOPLES R CHINA, SEP 18-19, 1998
作者:
Yan XJ
;
Zhu HL
;
Wang W
;
Xu GY
;
Zhou F
;
Ma CH
;
Wang XJ
;
Tian HL
;
Zhang JY
;
Wu RH
;
Wang QM
;
Yan XJ Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(536Kb)
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收藏
  |  
浏览/下载:1560/496
  |  
提交时间:2010/10/29
Semi-insulating
Fe-doped
Mocvd