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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Sun, GS
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
;
Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)
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收藏
  |  
浏览/下载:1640/274
  |  
提交时间:2010/03/09
In-situ Doping
Boron
Aluminum
Memory Effects
Hot-wall Lpcvd
4h-sic
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
;
Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(246Kb)
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收藏
  |  
浏览/下载:1879/307
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
Buffer Layer
Lpcvd
Si based quantum cascade structure: from energy band structures design to materials growth
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Hangzhou, PEOPLES R CHINA, JUN 09-14, 2008
作者:
Yu, JZ
;
Han, GQ
;
Yu, JZ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(458Kb)
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收藏
  |  
浏览/下载:1688/311
  |  
提交时间:2010/03/09
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
;
Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)
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收藏
  |  
浏览/下载:1586/232
  |  
提交时间:2010/03/09
Induced Refractive-index
Growth
Lasers
Gaas
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)
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收藏
  |  
浏览/下载:1866/329
  |  
提交时间:2010/03/09
Gas Sensors
Hemt Structures
Mobility
Temperature
Transistors
Growth
Mocvd
Layer
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Yan, FW, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
Adobe PDF(1746Kb)
  |  
收藏
  |  
浏览/下载:2896/891
  |  
提交时间:2010/03/09
Gan
Mocvd
Led
Nano-pattern
Sem
Hrxrd
Pl
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
;
Wei, TB, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China.
Adobe PDF(954Kb)
  |  
收藏
  |  
浏览/下载:1771/511
  |  
提交时间:2010/03/09
Hvpe
Gan
Nitridation
Polarity
Etching
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Gao, HY
;
Yan, FW
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
;
Gao, HY, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, A35 Qinghua E Rd, Beijing 100083, Peoples R China.
Adobe PDF(753Kb)
  |  
收藏
  |  
浏览/下载:2810/842
  |  
提交时间:2010/03/09
Pyramidal Patterned Substrate
Ingan/gan
Light-emitting Diode
Wet Etching
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:
Ji, G
;
Sun, GS
;
Ning, J
;
Liu, XF
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Ji, G, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(1783Kb)
  |  
收藏
  |  
浏览/下载:1354/225
  |  
提交时间:2010/03/09
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
;
Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, Beijing 100083, Peoples R China.
Adobe PDF(471Kb)
  |  
收藏
  |  
浏览/下载:1997/557
  |  
提交时间:2010/03/09
Algan
Gan Template
A1n Interlayer
Mocvd
Crack
Interference Fringes