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The influence of oxygen content on photoluminescence from Er-doped SiOx 会议论文
LUMINESCENT MATERIALS, 560, SAN FRANCISCO, CA, APR 05-08, 1999
作者:  Chen WD;  Liang JJ;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：821/0  |  提交时间：2010/10/29
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:  Wang HM;  Zeng YP;  Pan L;  Zhou HW;  Zhu ZP;  Kong MY;  Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)  |  收藏  |  浏览/下载：881/155  |  提交时间：2010/10/29