The influence of oxygen content on photoluminescence from Er-doped SiOx

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The influence of oxygen content on photoluminescence from Er-doped SiOx
	Chen WD; Liang JJ; Hsu CC; Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	Symposium E on Luminescent Materials at the 1999 MRS Spring Meeting
会议录名称	LUMINESCENT MATERIALS, 560
页码	107-111
会议日期	APR 05-08, 1999
会议地点	SAN FRANCISCO, CA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-467-X
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.
学科领域	半导体材料
主办者	Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13779
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen WD,Liang JJ,Hsu CC,et al. The influence of oxygen content on photoluminescence from Er-doped SiOx[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1999:107-111.