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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:  Liang, LY;  Ye, XL;  Jin, P;  Chen, YH;  Wang, ZG;  Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)  |  收藏  |  浏览/下载：1632/232  |  提交时间：2010/03/09
Induced Refractive-index  Growth  Lasers  Gaas  
Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407 会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:  Wen, JM;  Liu, Y;  Wang, X;  Yuan, HQ;  Xie, L;  Zhu, NH;  Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)  |  收藏  |  浏览/下载：1912/508  |  提交时间：2010/03/09
Equivalent Circuits  Fp Laser Modules  Dfb Laser Modules  Vcsel Modules  Through Hole (To) Packaging  
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Fang, ZD (Fang, Zhidan);  Gong, M (Gong, Meng);  Miao, ZH (Miao, Zhenhua);  Niu, ZC (Niu, Zhichuan);  Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)  |  收藏  |  浏览/下载：1655/334  |  提交时间：2010/03/29
Quantum Dots  Photoluminescence  Combination Layer  1.3 Mu-m  Lasers  Inalas  
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Jiang DS;  Bian LF;  Liang XG;  Chang K;  Sun BQ;  Johnson S;  Zhang YH;  Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：1545/405  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Quantum Wells  Gaassb/gaas  Gaas  Lasers  Gain  
Fabrication of semiconductor optical amplifiers and a novel gain measuring technique 会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:  Huang YZ;  Guo WH;  Yu LJ;  Lu XL;  Tan MQ;  Ma XY;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(212Kb)  |  收藏  |  浏览/下载：1214/276  |  提交时间：2010/10/29
Spectra  Lasers  
1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE 会议论文
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VI, 4640, SAN JOSE, CA, FEB 21-23, 2002
作者:  Qiu WB;  Dong J;  Zhang JY;  Zhou F;  Zhu HL;  Wang W;  Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：1125/277  |  提交时间：2010/10/29
Spotsize Converter  Selective Area Growth  Butt-joint  Wave-guide  Lasers  
Optical study on the coupled GaAsSb/GaAs double quantum wells 会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:  Jiang DS;  Liang XG;  Chang K;  Bian LF;  Sun BQ;  Wang JB;  Johnson S;  Zhang Y;  Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)  |  收藏  |  浏览/下载：1412/272  |  提交时间：2010/10/29
Lasers  Gain  Gaas  
Analysis of equilateral triangle semiconductor microlasers with rough sidewalls 会议论文
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, CHIBA, JAPAN, JUL 15-19, 2001
作者:  Huang YZ;  Gun WH;  Yu LJ;  Lei HB;  Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1126/297  |  提交时间：2010/10/29
Lasers  
Wavelength tunable electroabsorption modulated DFB baser with thin film heater 会议论文
LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, RIO GRANDE, PR, NOV 13-16, 2000
作者:  Liu GL;  Wang W;  Zhang JY;  Wang XJ;  Chen WX;  Zhu HL;  Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1303/297  |  提交时间：2010/10/29
Laser  
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:  Sun ZZ;  Liu FQ;  Wu J;  Ye XL;  Ding D;  Xu B;  Liang JB;  Wang ZG;  Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)  |  收藏  |  浏览/下载：1406/262  |  提交时间：2010/11/15
Self-assembled Quantum Dots  Inp Substrate  High Index  Mbe  In(Ga  Molecular-beam-epitaxy  Al)as/inAlas/inp  Vapor-phase Epitaxy  Gaas  Islands  Photoluminescence  Inp(001)  Growth  Lasers