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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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GaN-based violet lasers grown on sapphire with a novel facet fabrication method
会议论文
, 中国深圳, 2015
作者:
Yingdong Tian
;
Yun Zhang
;
Jianchang Yan
;
Xiang Chen
;
Yanan Guo
;
Xuecheng Wei
;
Junxi Wang
;
Jinmin Li
Adobe PDF(336Kb)
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  |  
浏览/下载:1129/5
  |  
提交时间:2016/06/02
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vancouver, CANADA, AUG 13-17, 2006
作者:
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
;
Wang, XY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(229Kb)
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浏览/下载:1727/341
  |  
提交时间:2010/03/29
Buffer Layer
Stress
Photodiodes
Reduction
Detectors
Sapphire
Epitaxy
Growth
1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector
会议论文
OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Beijing, PEOPLES R CHINA, NOV 08-11, 2004
作者:
Li CB
;
Cheng BW
;
Mao RW
;
Zuo YH
;
Yu JZ
;
Wang QM
;
Li, CB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(113Kb)
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  |  
浏览/下载:1716/292
  |  
提交时间:2010/03/29
Wave-guide Photodetector
Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser
会议论文
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, MAY 31-JUN 02, 2004
作者:
Xu QY
;
Chen SW
;
Xu, QY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(267Kb)
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  |  
浏览/下载:1523/294
  |  
提交时间:2010/03/29
Fiber Grating
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
会议论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42, SEOUL, SOUTH KOREA, AUG 20-23, 2002
作者:
Sun YP
;
Shen XM
;
Zhang ZH
;
Zhao DG
;
Feng ZH
;
Fu Y
;
Zhang SN
;
Yang H
;
Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(172Kb)
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  |  
浏览/下载:1415/260
  |  
提交时间:2010/11/15
Wafer Bunding
Cubic Gan
Light-emitting-diodes
Field-effect Transistor
Single-crystal Gan
Microwave Performance
Mirror
Junction
Stress analysis of silica-based arrayed waveguide grating by a finite element method
会议论文
MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING, 4918, SHANGHAI, PEOPLES R CHINA, OCT 14-18, 2002
作者:
Deng XQ
;
Yang QQ
;
Wang HJ
;
Hu XW
;
Wang QM
;
Deng XQ Chinese Acad Sci Inst Semicond R&D Ctr Optoelect Beijing 100083 Peoples R China.
Adobe PDF(256Kb)
  |  
收藏
  |  
浏览/下载:1338/269
  |  
提交时间:2010/10/29
Finite Element Method
Stress
Silica Optical Waveguide On silicOn
Birefringence
Optical Wave-guides
Difference Method
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
;
Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)
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  |  
浏览/下载:1389/345
  |  
提交时间:2010/11/15
Impurities
Molecular Beam Epitaxy
Nitrides
Semiconducting Iii-v Materials
Gallium Nitride
Sapphire Substrate
Defects
Heterostructure
Semiconductors
Stress
Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
会议论文
50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS, LAS VEGAS, NV, MAY 21-24, 2000
作者:
Li C
;
Yang QQ
;
Ou HY
;
Wang QM
;
Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(305Kb)
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  |  
浏览/下载:1571/439
  |  
提交时间:2010/10/29
Mirrors
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Zhang JP
;
Sun DZ
;
Li XB
;
Wang XL
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(127Kb)
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  |  
浏览/下载:1461/307
  |  
提交时间:2010/11/15
Stress
Growth
Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes
会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:
Wang GH
;
Ma XY
;
Zhang YF
;
Peng HI
;
Wang ST
;
Li YZ
;
Chen LH
;
Wang GH Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(177Kb)
  |  
收藏
  |  
浏览/下载:1483/352
  |  
提交时间:2010/10/29
Led
Coupled Distributed Bragg Reflector
Mocvd
Algainp