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Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Huang CJ;  Zuo YH;  Li C;  Li DZ;  Cheng BW;  Luo LP;  Yu JZ;  Wang QM;  Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：1432/297  |  提交时间：2010/10/29
Ge/si Islands  Quantum Dot  Band Alignment  Pl  Si/si1-xgex Quantum-wells  Stranski-krastanov Growth  Ii Band Alignment  Ge Islands  Temperature-dependence  Photoluminescence  Layers  Luminescence  Organization  Mechanism  
Long-wavelength Si-based MQW photodetectors for application in optical fiber communication 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
作者:  Wang QM;  Li C;  Yang QQ;  Liu YL;  Zhu YQ;  Cheng BW;  Yu JZ;  Wang QM Chinese Acad Sci Inst Semicond State Key Joint Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(254Kb)  |  收藏  |  浏览/下载：1405/298  |  提交时间：2010/10/29
Long-wavelength  Si  Waveguide  Resonant-cavity-enhanced Photodetector  And Optical Communication  
Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy 会议论文
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, SHANGHAI, PEOPLES R CHINA, OCT 22-25, 2001
作者:  Lu LW;  Ge WK;  Sou IK;  Wang J;  Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB912 Beijing 100083 Peoples R China.
Adobe PDF(155Kb)  |  收藏  |  浏览/下载：1507/306  |  提交时间：2010/10/29
Znste  
Photoluminescence from carbon nanotubes 会议论文
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 87, OSAKA, JAPAN, SEP 17-22, 2000
作者:  Han HX;  Li GH;  Ge WK;  Wang ZP;  Xu ZY;  Xie SS;  Chang BH;  Sun LF;  Wang BS;  Xu G;  Su ZB;  Han HX Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
收藏  |  浏览/下载：928/0  |  提交时间：2010/10/29
Electronic-structure  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Gao F;  Lin YX;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)  |  收藏  |  浏览/下载：1775/419  |  提交时间：2010/11/15
Annealing  Molecular Beam Epitaxy  Germanium Silicon Alloys  Semiconducting Materials  Strain Relaxation  
无权访问的条目 期刊论文
作者:  Liu BL;  Xu ZY;  Wang BS;  Deng YM;  Yang FH;  Ge WK;  Liu BL,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(132Kb)  |  收藏  |  浏览/下载：961/257  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Gao F;  Huang CJ;  Huang DD;  Li JP;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Shaanxi Normal Univ,Dept Phys,Xian 710062,Peoples R China.
Adobe PDF(391Kb)  |  收藏  |  浏览/下载：1039/241  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Liu BL;  Liu B;  Xu ZY;  Ge WK;  Liu BL,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(72Kb)  |  收藏  |  浏览/下载：956/280  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Gao F;  Huang DD;  Li JP;  Kong MY;  Sun DZ;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1107/317  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Chen NF;  Zhong XR;  Lin LY;  Zhang M;  Wang YS;  Bai XW;  Zhao J;  Chen NF,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(21Kb)  |  收藏  |  浏览/下载：1052/367  |  提交时间：2010/08/12