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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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浏览/检索结果:
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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, Shanghai, PEOPLES R CHINA, MAR 24-27, 2008
作者:
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
;
Liang, LY, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(799Kb)
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浏览/下载:1746/232
  |  
提交时间:2010/03/09
Induced Refractive-index
Growth
Lasers
Gaas
Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407
会议论文
SEMICONDUCTOR LASERS AND APPLICATIONS III, Beijing, PEOPLES R CHINA, NOV 12-13, 2007
作者:
Wen, JM
;
Liu, Y
;
Wang, X
;
Yuan, HQ
;
Xie, L
;
Zhu, NH
;
Zhu, NH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(163Kb)
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浏览/下载:1983/508
  |  
提交时间:2010/03/09
Equivalent Circuits
Fp Laser Modules
Dfb Laser Modules
Vcsel Modules
Through Hole (To) Packaging
Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Fang, ZD (Fang, Zhidan)
;
Gong, M (Gong, Meng)
;
Miao, ZH (Miao, Zhenhua)
;
Niu, ZC (Niu, Zhichuan)
;
Fang, ZD, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(431Kb)
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  |  
浏览/下载:1788/334
  |  
提交时间:2010/03/29
Quantum Dots
Photoluminescence
Combination Layer
1.3 Mu-m
Lasers
Inalas
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
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浏览/下载:1630/405
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提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain
Fabrication of semiconductor optical amplifiers and a novel gain measuring technique
会议论文
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, KOWLOON, PEOPLES R CHINA, SEP 12-14, 2003
作者:
Huang YZ
;
Guo WH
;
Yu LJ
;
Lu XL
;
Tan MQ
;
Ma XY
;
Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(212Kb)
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浏览/下载:1304/276
  |  
提交时间:2010/10/29
Spectra
Lasers
1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE
会议论文
INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES VI, 4640, SAN JOSE, CA, FEB 21-23, 2002
作者:
Qiu WB
;
Dong J
;
Zhang JY
;
Zhou F
;
Zhu HL
;
Wang W
;
Qiu WB Chinese Acad Sci Natl Res Ctr Optoelect Technol Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(117Kb)
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浏览/下载:1245/277
  |  
提交时间:2010/10/29
Spotsize Converter
Selective Area Growth
Butt-joint
Wave-guide
Lasers
Optical study on the coupled GaAsSb/GaAs double quantum wells
会议论文
COMMAD 2002 PROCEEDINGS, SYDNEY, AUSTRALIA, DEC 11-13, 2002
作者:
Jiang DS
;
Liang XG
;
Chang K
;
Bian LF
;
Sun BQ
;
Wang JB
;
Johnson S
;
Zhang Y
;
Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
Adobe PDF(215Kb)
  |  
收藏
  |  
浏览/下载:1511/272
  |  
提交时间:2010/10/29
Lasers
Gain
Gaas
Analysis of equilateral triangle semiconductor microlasers with rough sidewalls
会议论文
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, CHIBA, JAPAN, JUL 15-19, 2001
作者:
Huang YZ
;
Gun WH
;
Yu LJ
;
Lei HB
;
Huang YZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(110Kb)
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  |  
浏览/下载:1234/297
  |  
提交时间:2010/10/29
Lasers
Wavelength tunable electroabsorption modulated DFB baser with thin film heater
会议论文
LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2, RIO GRANDE, PR, NOV 13-16, 2000
作者:
Liu GL
;
Wang W
;
Zhang JY
;
Wang XJ
;
Chen WX
;
Zhu HL
;
Liu GL Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(113Kb)
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  |  
浏览/下载:1371/297
  |  
提交时间:2010/10/29
Laser
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
会议论文
PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Sun ZZ
;
Liu FQ
;
Wu J
;
Ye XL
;
Ding D
;
Xu B
;
Liang JB
;
Wang ZG
;
Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(192Kb)
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浏览/下载:1547/262
  |  
提交时间:2010/11/15
Self-assembled Quantum Dots
Inp Substrate
High Index
Mbe
In(Ga
Molecular-beam-epitaxy
Al)as/inAlas/inp
Vapor-phase Epitaxy
Gaas
Islands
Photoluminescence
Inp(001)
Growth
Lasers